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Temperature Dependent Intermixing At The V/Ge(111) Interface

Published online by Cambridge University Press:  26 February 2011

M. Del Giudice ,
R. A. Butera ,
J. J. Joyce ,
M. W. Ruckman  and
J. H. Weaver
M. Del Giudice
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota Minneapolis, Minnesota55455
R. A. Butera
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota Minneapolis, Minnesota55455
J. J. Joyce
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota Minneapolis, Minnesota55455
M. W. Ruckman
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota Minneapolis, Minnesota55455
J. H. Weaver
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota Minneapolis, Minnesota55455
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Abstract

High resolution core level photoemission results show the temperature evolution of the V/Ge(111) interface in the range from 300 to 600 K. Three well-defined chemical environments are present for Ge at 300K (the first is the substrate and the other two are reaction products with overall shifts of−0.5 and −0.95 eV). Increasing the temperature enhances Ge outdiffusion, and a homogeneous reacted layer forms when deposition and measurements are done isothermally at 475K. The activation energy for this diffusion process is very low (5 kcal/mole), indicating the importance of grain boundary diffusion at reacting, heterogeneous interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 91
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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