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Design for Reliability and Common Failure Mechanisms in Vertical Cavity Surface Emitting Lasers

Published online by Cambridge University Press:  17 May 2012

Robert W. Herrick
Robert W. Herrick*
Affiliation:
JDSU Inc, 80 Rose Orchard Way, San Jose, CA 95134, U.S.A.
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Abstract

Vertical-Cavity Surface-Emitting Lasers are making up a large and growing share of the world’s production of semiconductor lasers. But the 850 nm GaAs quantum well VCSELs that make up most of present product are highly vulnerable to dislocation networks. In this paper, we discuss how materials selection affects the reliability of semiconductor lasers generally. We then describe the most common failure mechanisms observed in VCSELs, and what precautions are used to prevent them. We finish with a brief discussion of reliability testing and failure analysis.

Keywords

laserdefectselectronic material
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g01-04
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

[1]“Private conversation with Kent Choquette and Martin Grabherr.” Jan-2012.Google Scholar
[2] Dow, J. D. and Allen, R. E., “Role of dangling bonds and antisite defects in rapid and gradual III-V laser degradation,” Applied Physics Letters, vol. 41, no. 7, pp. 672–674, 1982.Google Scholar
[3] Kamiya, Sinichi and et al. ., “Highly Reliable 1060nm Vertical Cavity Surface Emitting Lasers (VCSELs) for Optical Interconnects,” Proceedings of MRS, vol. Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II (this issue), 2012.Google Scholar
[4] Yellen, S. L., Shepard, A. H., Dalby, R. J., Baumann, J. A., Serreze, H. B., Guido, T. S., Soltz, R., Bystrom, K. J., Harding, C. M., and Waters, R. G., “Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1um,” Quantum Electronics, IEEE Journal of, vol. 29, no. 6, pp. 2058–2067, 1993.Google Scholar
[5] Waters, R. G., “Diode laser degradation mechanisms: A review.,” Progress in Quantum Electronics, vol. 15, no. 3, pp. 153–174, 1991.Google Scholar
[6] Baumann, J. A., “Strained quaternary InAlGaAs 810-nm lasers,” in Proceedings of SPIE, Los Angeles, CA, USA, 1993, vol. 1850, pp. 203–214.Google Scholar
[7] Ko, J., Hegblom, E.R., Akulova, Y., Thibeault, B.J., and Coldren, L.A., “Low-threshold 840-nm laterally oxidized vertical-cavity lasers using AlInGaAs-AlGaAs strained active layers,” Photonics Technology Letters, IEEE, vol. 9, no. 7, pp. 863–865, 1997.Google Scholar
[8] Wang, H., Hopgood, A. A., and Ng, G. I., “Analysis of dark-line defect growth suppression in InxGa1-xAs/GaAs strained heterostructures,” Journal of Applied Physics, 1997. .Google Scholar
[9] Siegelin, F. and Brillert, C., “Failure Analysis of Vertical Cavity Surface Emission Laser Diodes,” in ISTFA 2003: proceedings of the 29th International Symposium for Testing and Failure Analysis, 2-6 November 2003, Santa Clara Convention Center, Santa Clara, California, 2003, p. 426.Google Scholar
[10] Helms, C., Aeby, I., Luo, W., Herrick, R. W., and Yuen, A., “Reliability of oxide VCSELs at emcore,” in Proc. of SPIE, Vol 5364, 2004, vol. 5364, pp. 183–189.Google Scholar
[11] Stark, T. J., Russell, P. E., and Nevers, C., “3-D defect characterization using plan view and cross-sectional TEM/STEM analysis,” in Proc of ISTFA, 2005, vol. 31, p. 344.Google Scholar
[12] Mathes, D., Guenter, J., Hawkins, B., Hawthorne, B., and Johnson, C., “An Atlas of ESD Failure Signatures in Vertical Cavity Surface Emitting Lasers,” in Proc of ISTFA 2005, 2005, vol. 31, p. 336.Google Scholar
[13] Guenter, J., Mathes, D., Hawkins, B., and Tatum, J., “Developments at Finisar AOC,” in Proceedings of SPIE, Vol 6908, San Jose, CA, USA, 2008, vol. 6908, p. 690805.Google Scholar
[14] Xie, C., Li, N., Lei, C., Sun, X., Luo, W., Zhao, L., Helms, C., Liu, C., Jessen, D., and Carson, R., “New high speed VCSEL product development at Emcore,” in Proc of SPIE, Vol. 7952, San Francisco, California, USA, 2011, p. 7952–06.Google Scholar
[15] Herrick, R., “Reliability and Degradation of Vertical Cavity Surface Emitting Lasers,” in Materials and Reliability Handbook for Semiconductor Optical and Electronic Devices, Springer, 2012.Google Scholar
[16] Herrick, Robert, “Failure Analysis and Reliability of Optoelectronic Devices,” in Microelectronics Failure Analysis: Desk Reference, 6th Edition, 6th ed., Material Park, OH, USA: ASM International, 2011, pp. 78–98.Google Scholar
[17] Ueda, O. and Herrick, R., “Failure Analysis of Optical Devices,” in Materials and Reliability Handbook for Semiconductor Optical and Electronic Devices, Springer, 2012.Google Scholar