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Selective Nucleation of Diamond Crystals on the Apex of Silicon Pyramids

Published online by Cambridge University Press:  25 February 2011

R. Ramesham  and
C. Ellis
R. Ramesham
Affiliation:
Electrical Engineering Department Alabama Microelectronics Science and Technology, Center Auburn University, AL 3 6849–5201
C. Ellis
Affiliation:
Electrical Engineering Department Alabama Microelectronics Science and Technology, Center Auburn University, AL 3 6849–5201
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Abstract

Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. Nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches were analyzed by scanning electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 69
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Hitsuda, K., Kojima, Y., Yoshida, T., and Akashi, K.. J. Hater. Sci., 22, 1557 (1987).Google Scholar
2. Yugo, S., Kimura, T., Kanai, H., and Adachi, Y., “Growth of diamond films by plasma CVD,” pp. 327–332 in Novel Refractory Semiconductors,” edited by Emin, D., Aselage, T.L., and Wood, C., Materials Research Society, Pittsburgh, PA, 1987.Google Scholar
3. Chang, C. P., Flamm, D. L., Ibbotson, D. E., and Mucha, J. A., J. Appl. Phys., 63, 1744 (1988).Google Scholar
4. Hirabayashi, K., Taniguchi, Y., Takamatsu, O., Ikeda, T., Ikoma, K., and Kurihara, N.I., Appl. Phys. Lett., 53, 1815 (1988).Google Scholar
5. Davidson, J. L., Ellis, C., and Ramesham, R., J. Electron. Mater., 18, 711 (1989).Google Scholar
6. Ramesham, R., Roppel, T., Ellis, C., Jaworske, D.A., and Baugh, U., J. Hater. Res., 6, 1278 (1991).Google Scholar
7. Ramesham, R., Roppel, T., Hajek, B.F., Ellis, C., and Loo, B.H., “Selective growth of boron-doped polycrystalline diamond thin films,” Proc. 2nd Int. Conf. on New Diamond Science and Technology, edited by Messier, R., Glass, J.T., Butler, J.E., and Roy, R., Washington, DC (Hater. Res. Soc., Pittsburgh, PA), p. 943 (1991).Google Scholar
8. Bean, K. E., “Semiconductor Materials and Process Technology Handbook,” Edited by HcGuire, G.E. (Noyes Publications, Park Ridge, NJ) Chap. 4, p. 126.Google Scholar
9. Denning, P. A. and Stevenson, D. A., “Influence of substrate preparation upon the nucleation of diamond thin films,” Proc. 2nd Intl. Conf. on New Diamond Science and Technology, edited by Messier, R., Glass, J. T., Butler, J. E., and Roy, R., Washington, DC (Hat. Res. Soc., Pittsburgh, PA), p.403 (1991)Google Scholar
10. Denning, P. A. and Stevenson, D. A., “Influence of substrate topography on the nucleation of diamond thin films,” Proc. 1st Inti. Conf. on the Applications of Diamond Films and Related Materials, edited by Tzeng, Y., Yoshikawa, M., Murakawas, H., and Feldman, A., Auburn, AL, Aug 17- 22, 1991 (Materials Science Monographs, 73, Elsevier, Amsterdam), p. 383.Google Scholar
11. Ramesham, R., Communicated at the Spring Electrochemical Society Meeting, Washington, DC, May 5–10, 1991.Google Scholar
12. Kenny, T. W., Ualtman, S. W., Reynolds, J. K., and Kaiser, W. J., Appl. Phys. Lett., 58, 100 (1991).Google Scholar