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Ferroelectric and Electrical Properties of BaZrO3 Doped Sr0.8Bi2.2Ta2O9 Thin Films

Published online by Cambridge University Press:  01 February 2011

Mehmet S. Bozgeyik ,
J. S. Cross ,
H. Ishiwara  and
K. Shinozaki
Mehmet S. Bozgeyik
Affiliation:
mehmets_bozgeyik@sim.ceram.titech.ac.jp, Tokyo Institute of Technology, Metallurgy and Ceramics Science, 2-12-1 S7 Ookayama, Meguro-ku, N/A 152-8550, Japan, +81-3-5734-3367, +81-3-5734-3369
J. S. Cross
Affiliation:
cross.j.aa@m.titech.ac.jp, Fujitsu Laboratories, Ltd., 10-1 Morinosato-wakakiya, Atsugi, Kanagawa, 243-0197, Japan
H. Ishiwara
Affiliation:
ishiwara@ae.titech.ac.jp, Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
K. Shinozaki
Affiliation:
ksino@ceram.titech.ac.jp, Tokyo Institute of Technology, Metallurgy and Ceramics Science, 2-12-1 S7 Ookayama, Meguro-ku, Tokyo, 152-8550, Japan
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Abstract

BaZrO3 (BZO) doped Sr0.8Bi2.2Ta2O9 (SBT), a new modified SBT, thin films were prepared and related ferroelectric and electrical properties were evaluated.

Keywords

ferroelectricthin filmelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F03-09
Copyright
Copyright © Materials Research Society 2008

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References

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