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Phase Formation in Cu(Sn) Alloy Thin Films
Published online by Cambridge University Press: 15 February 2011
Abstract
The interdiffusion of Cu and Sn and the formation and dissolution of Cu-Sn precipitate phases have been examined for Cu(Sn) alloy thin films. Cu(Sn) films were deposited by electron beam evaporation in either a Sn/Cu bilayer or Cu/Sn/Cu trilayer film structure, with overall Sn concentrations from 0.1 to 5 atomic percent. Analysis by in situ resistivity, calorimetry, electron diffraction and x-ray diffraction measurements indicates that the bilayer and trilayer films form the intermetallic phase η-Cu6 Sn5 during film deposition. Upon heating, the ε-Cu3Sn phase forms at 170°C, then this phase dissolves into the Cu matrix at approximately 350°C. Finally, ζ- Cu10Sn3 phase forms and precipitates after heating to 500°C and cooling to room temperature. The final resistivity of Cu/Sn/Cu films with more than 2 atomic percent Sn was greater than 3.5 μΩ - cm. However, resistivities from 1.9 to 2.5 μΩ - cm after annealing were obtained with Cu/Sn/Cu films containing less than 2 atomic percent Sn.
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- Copyright © Materials Research Society 1996
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