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Hexagonal Pyramids Shaped GaN Light Emitting Diodes Array by N-polar Wet Etching

Published online by Cambridge University Press:  15 May 2013

Jun Ma*
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Liancheng Wang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Zhiqiang Liu
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Guodong Yuan
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Xiaoli Ji
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Ping Ma*
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Junxi Wang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Xiaoyan Yi
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Guohong Wang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
Jinmin Li
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P R China
*
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Abstract

In this work, we investigated the influence of N-polar wet etching on the properties of nitride-based hexagonal pyramids array (HPA) vertical-injection light emitting diodes (V-LEDs). The cathodeluminescence images showed the randomly distribution of hexagonal pyramids with isolated active regions. The transmission electron microscopy images demonstrated the reduced density of threading dislocations. The IQE was estimated by temperature dependence of photoluminescence, which showed 30% increase for HPA V-LEDs compared with broad area (BA) V-LEDs. The improved extraction efficiency was verified by finite difference time domain simulation, which was 20% higher than that of roughened BA V-LEDs. The electrical properties of HPA V-LEDs were measured by conductive atomic force microscopy (CAFM) measurements. HPA V-LEDs exhibited much lower leakage current due to the improved crystal quality.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Shchekin, O. B., Epler, J. E., Trottier, T. A., Margalith, T., Steigerwald, D. A., Holcomb, M. O., Martin, P. S., and Krames, M. R.. “High performance thin-film flip-chip InGaN–GaN light-emitting diodes, ” Appl. Phys. Lett. 89, 071109 (2006).CrossRefGoogle Scholar
Chu, Ch.-F., Lai, F.-I., Chu, J.-T., Yu, C.-C., Lin, C.-F., Kuo, H.-C., and Wang, S. C., “Study of GaN light-emitting diodes fabricated by laser lift-off technique, ” J. Appl. Phys. 95, 3916 (2004).CrossRefGoogle Scholar
Lin, W. Y., Wuu, D. S., Pan, K. F., Huang, S. H., Lee, C. E., Wang, W. K., Hsu, S. C., Su, Y. Y., Huang, S. Y., and Horng, R. H., “High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques, ” IEEE Photonic. Tech. Lett. 17, 18091811 (2005).CrossRefGoogle Scholar
Chu, C.-F., Yu, C.-C., Cheng, H.-C., Lin, C.-F., and Wang, S.-C., “Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off, ” Jpn. J. Appl. Phys. 42, L147L150 (2003).CrossRefGoogle Scholar
Chu, J.-T., Huang, H.-W., Kao, C.-C., Liang, W.-D., Lai, F.-I, Chu, C.-F., Kuo, H.-C., and Wang, S.-C., “Fabrication of large-area GaN-based light-emitting diodes on Cu substrate, ” Jpn. J. Appl. Phys. 44, 25092511 (2005).CrossRefGoogle Scholar
Nguyen, H. P. T., Cui, K., Zhang, S.f., Djavid, M., Korinek, A., Botton, G. A., and Mi, Z., “Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes, ” Nano Lett. 12, 13171323(2012).CrossRefGoogle ScholarPubMed
Kim, H.-M., Cho, Y.-H., Lee, H., Kim, S. I., Ryu, S. R., Kim, D. Y., Kang, T. W., and Chung, K. S., “High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays, ” Nano Lett. 4, 10591062 (2004).CrossRefGoogle Scholar
Fujii, T., Gao, Y., Sharma, R., Hu, E. L., DenBaars, S. P., and Nakamura, S., “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening, ” Appl. Phys. Lett. 84, 855 (2004).CrossRefGoogle Scholar
Ng, H. M., Weimann, N. G., and Chowdhury, A., “GaN nanotip pyramids formed by anisotropic etching, ” J. Appl. Phys. 94, 650 (2003).CrossRefGoogle Scholar
Qi, S. L., Chen, Z. Z., Fang, H., Sun, Y. J., Sang, L. W., Yang, X. L., Zhao, L. B., Tian, P. F., Deng, J. J., Tao, Y. B., Yu, T. J., Qin, Z. X., and Zhang, G. Y., “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4 , ” Appl. Phys. Lett. 95, 071114 (2009).CrossRefGoogle Scholar
Gao, Y., Fujii, T., Sharma, R., Fujito, K., DenBaars, S. P., Nakamura, S., and Hu, E. L., “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching, ” Jpn. J. Appl. Phys. 43, L637L639 (2004).CrossRefGoogle Scholar
Fujii, T., Gao, Y., Sharma, R., Hu, E. L., DenBaars, S. P., and Nakamura, S., “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening, ” Appl. Phys. Lett. 84, 855 (2004).CrossRefGoogle Scholar
Kim, J.-H., Oh, C.-S., Ko, Y.-H., Ko, S.-M., Park, K.-Y., Jeong, M., Lee, J. Y., and Cho, Y.-H., “Dislocation-eliminating chemical control method for high-efficiency GaN-based light emitting nanostructures, ” Cryst. Growth Des. 12, 12921298 (2012).CrossRefGoogle Scholar
Speck, J. S., and Rosner, S. J., “The role of threading dislocations in the physical properties of GaN and its alloys, ” Physica B 273-274, 2432 (1999).CrossRefGoogle Scholar
Badcock, T. J., Hao, R., Moram, M. A., Kappers, M. J., Dawson, P., and Humphreys, C. J., “The effect of dislocation density and surface morphology on the optical properties of InGaN/GaN quantum wells grown on r-plane sapphire substrates, ” Jpn. J. Appl. Phys. 50, 080201 (2011).Google Scholar
Tao, Y. B., Yu, T. J., Yang, Z. Y., Ling, D., Wang, Y., Chen, Z. Z., Yang, Z. J., Zhang, G. Y., “Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by metal organic vapor phase epitaxy, ”J. Cryst. Growth 315, 183187 (2011).CrossRefGoogle Scholar
Williams, F. E., and Eyring, H., “The mechanism of the luminescence of solids, ” J. Chem. Phys. 15, 289304 (1947);CrossRefGoogle Scholar
Dean, P. J., “Absorption and luminescence of excitons at neutral donors in gallium phosphide, ” Phys. Rev. 157, 655667 (1967)CrossRefGoogle Scholar
Son, J. H., Kim, J. U., Song, Y. H., Kim, B. J., Ryu, C. J., and Lee, J.-L., “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflectionAdv. Mater. 24, 22592262 (2012).CrossRefGoogle ScholarPubMed
Kozodoy, P., Ibbetson, J. P., Marchand, H., Fini, P. T., Keller, S., Speck, J. S., DenBaars, S. P., and Mishra, U. K., “Electrical characterization of GaN p-n junctions with and without threading dislocations, ” Appl. Phys. Lett. 73, 975 (1998).CrossRefGoogle Scholar