Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-19T07:21:09.368Z Has data issue: false hasContentIssue false

Extracting Piezoresistance in SiNWs using Thermal Induced Buckling of Micro-bridges

Published online by Cambridge University Press:  31 January 2011

Chee Chung Wong
Affiliation:
cheechung27@yahoo.com, Nanyang Technological University, Division of Bioengineering, Singapore, Singapore
Pavel Neuzil
Affiliation:
pavel@ime.a-star.edu.sg, A*STAR, Institute of Microelectronics, Singapore, Singapore
Ajay Agarwal
Affiliation:
agarwal@ime.a-star.edu.sg, A*STAR, Institute of Microelectronics, Singapore, Singapore
Julien Reboud
Affiliation:
julien@ime.a-star.edu.sg, A*STAR, Institute of Microelectronics, Singapore, Singapore
Kin Liao
Affiliation:
AskLiao@ntu.edu.sg, Nanyang Technological University, Singapore, Division of Bioengineering, Singapore, Singapore
Get access

Abstract

The recent reports on giant piezoresistance effect in highly resistive silicon nanowires (SiNWs) have offer greater sensitivity in stress measurements. Despite enhanced sensitivity, the piezoresistance of highly conductive silicon are preferred as they are less prone to thermal noises and hence better accuracy. Here we report a thermal induced buckle micro-bridge technique to accurately characterize the temperature dependent piezoresistivity effect in SiNWs. Phosphorus doped <110> SiNWs with 50 nm width, 95 nm thickness and 100 μm length were encapsulated within SiO2 micro-bridges. The electrical measurement of both reference SiNWs and SiNWs at micro-bridges was carried out, followed by the optical profiling of the micro-bridges with embedded SiNWs. N-type SiNWs with doping of 1×1020 ion/cm3 exhibit a strong dependence on temperature with a piezoresistive coefficient that decreases by 22.5 % between 25 oC to 60 oC; whereas its bulk counterpart is independent of temperature across this range. The results demonstrated that thermal noises may be more detrimental to nano-scale electromechanical sensors than its bulk counterparts.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. He, R. R. and Yang, PD., Nature Nanotechnology 1, 42 (2006).10.1038/nnano.2006.53Google Scholar
2. Reck, K., Richter, J., Hansen, O. and Thomsen, E.V., IEEE MEMS 2008 Tucson, USA 717 (2008).Google Scholar
3. Toriyama, T., Funai, D., and Sugiyama, S., J. of Appl. Phys. 93, 561 (2003).10.1063/1.1525067Google Scholar
4. Rowe, A. C. H., Nature Nanotechnology 3, 311 (2008).10.1038/nnano.2008.108Google Scholar
5. Agarwal, A., Buddharaju, K., Lao, I. K., Singh, N., Balasubramanian, N. and Kwong, D. L., Sensors and Actuators: A Physical 145, 207 (2008).10.1016/j.sna.2007.12.019Google Scholar
6. Lin, S. C. H.. and Pugacz-Muraszkiewicz, I., J. of Appl. Phys. 43, 119 (1972).10.1063/1.1660794Google Scholar
7. Gordon, M. J., Baron, T., Dhalluin, F., Gentile, P. and Ferret, P. Nano Lett. 9, 525 (2009).10.1021/nl802556dGoogle Scholar
8. Jiang, H., Khang, D. Y., Song, J., Sun, Y. Huang, Y. and Rogers, J. A., PNAS 104, 15607 (2007).10.1073/pnas.0702927104Google Scholar
9. Tufte, O. N. and Stelzer, E. L., J. Appl. Phys. 34, 313 (1963).10.1063/1.1702605Google Scholar