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Fabrication of YMnO3 Films: New Candidate for Non-Volatile Memory Devices

Published online by Cambridge University Press:  10 February 2011

Norifumi Fujimura ,
Tadashi Ishida ,
Takeshi Yoshimura  and
Taichiro Ito
Norifumi Fujimura
Affiliation:
College of Engineering, Dept. of Applied Materials Science University of Osaka Prefecture, 1-1 Gakuen-cho, Sakai, Osaka, 593 Japan
Tadashi Ishida
Affiliation:
College of Engineering, Dept. of Applied Materials Science University of Osaka Prefecture, 1-1 Gakuen-cho, Sakai, Osaka, 593 Japan
Takeshi Yoshimura
Affiliation:
College of Engineering, Dept. of Applied Materials Science University of Osaka Prefecture, 1-1 Gakuen-cho, Sakai, Osaka, 593 Japan
Taichiro Ito
Affiliation:
College of Engineering, Dept. of Applied Materials Science University of Osaka Prefecture, 1-1 Gakuen-cho, Sakai, Osaka, 593 Japan
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Abstract

We have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 119
Copyright
Copyright © Materials Research Society 1996

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