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Comparison of Current – Voltage Characteristics of N and P Type 6H-SiC Schottky Diodes

Published online by Cambridge University Press:  21 March 2011

Q. Zhang ,
V. Madangarli ,
Y. Gao  and
T. S. Sudarshan
Q. Zhang
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
V. Madangarli
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
Y. Gao
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
T. S. Sudarshan
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Abstract

Forward and reverse current – voltage (I–V) characteristics of N and P-type Schottky diodes on 6H-SiC are compared in a temperature range of room temperature to 550K. While the room temperature I–V characteristics of the N-type Schottky diode after turn-on is more or less linear up to ∼ 100 A/cm2, the I–V characteristics of the P-type Schottky diode shows a non-linear behavior even after turn-on, indicating a variation in the on-state resistance with increase in forward current. For the first time it is shown that at high current densities (> 210 A/cm2) the forward voltage drop across P type Schottky diodes is lower than that across N type Schottky diodes on 6H-SiC. High temperature measurements indicate that while the on-state resistance of N type Schottky diodes increases with increase in temperature, the on-state resistance of P type Schottky diodes decreases with increase in temperature until a certain temperature. While the N-type diodes seem to have soft breakdown characteristics, the P-type diodes exhibit more or less abrupt breakdown characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.21
Copyright
Copyright © Materials Research Society 2001

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References

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