Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-17T23:48:32.479Z Has data issue: false hasContentIssue false
  • English
  • Français

On the mechanism of secondary pop-out in cyclic nanoindentation of single-crystal silicon

Published online by Cambridge University Press:  12 May 2015

Hu Huang  and
Jiwang Yan
Hu Huang
Affiliation:
Department of Mechanical Engineering, Keio University, Yokohama 223-8522, Japan
Jiwang Yan*
Affiliation:
Department of Mechanical Engineering, Keio University, Yokohama 223-8522, Japan
*
a)Address all correspondence to this author. e-mail: yan@mech.keio.ac.jp
Get access

Abstract

In cyclic nanoindentation of single-crystal silicon, an interesting phenomenon of a secondary pop-out event that closely follows the first pop-out event but with a larger critical load than the first is presented. Cyclic nanoindentation experiments under various loading/unloading rates and various maximum indentation loads were performed to verify the generality of the phenomenon of two pop-out events. Raman spectroscopy results indicate that the secondary pop-out does not induce any new phase, and the dominated end phases after the two pop-out events are still a mixture of Si-XII/Si-III phases. According to average contact pressure analysis, the phase transformation paths and the formation mechanism for the secondary pop-out event are discussed from the viewpoint of crystal nucleation and growth. The results indicate that phase transformations from the Si-I phase to Si-XII/Si-III phases are completed by two pop-out events in two adjacent indentation cycles, and the Si-XII/Si-III phases formed in previous indentation cycles strongly affect the phase transformations in subsequent loading/unloading processes.

Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 11 , 14 June 2015 , pp. 1861 - 1868
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

Contributing Editor: George M. Pharr

References

REFERENCES

Pharr, G.M., Oliver, W.C., and Clarke, D.R.: The mechanical-behavior of silicon during small-scale indentation. J. Electron. Mater. 19, 881 (1990).CrossRefGoogle Scholar
Domnich, V., Gogotsi, Y., and Dub, S.: Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon. Appl. Phys. Lett. 76, 2214 (2000).CrossRefGoogle Scholar
Juliano, T., Gogotsi, Y., and Domnich, V.: Effect of indentation unloading conditions on phase transformation induced events in silicon. J. Mater. Res. 18, 1192 (2003).CrossRefGoogle Scholar
Rao, R., Bradby, J.E., Ruffell, S., and Williams, J.S.: Nanoindentation-induced phase transformation in crystalline silicon and relaxed amorphous silicon. Microelectron. J. 38, 722 (2007).CrossRefGoogle Scholar
Zarudi, I., Zou, J., and Zhang, L.C.: Microstructures of phases in indented silicon: A high resolution characterization. Appl. Phys. Lett. 82, 874 (2003).CrossRefGoogle Scholar
Jang, J.I., Lance, M.J., Wen, S.Q., Tsui, T.Y., and Pharr, G.M.: Indentation-induced phase transformations in silicon: Influences of load, rate and indenter angle on the transformation behavior. Acta Mater. 53, 1759 (2005).CrossRefGoogle Scholar
Yan, J.W., Takahashi, H., Gai, X.H., Harada, H., Tamaki, J., and Kuriyagawa, T.: Load effects on the phase transformation of single-crystal silicon during nanoindentation tests. Mater. Sci. Eng., A 423, 19 (2006).CrossRefGoogle Scholar
Bradby, J.E., Williams, J.S., Wong-Leung, J., Swain, M.V., and Munroe, P.: Mechanical deformation in silicon by micro-indentation. J. Mater. Res. 16, 1500 (2001).CrossRefGoogle Scholar
Zarudi, I., Zhang, L.C., Cheong, W.C.D., and Yu, T.X.: The difference of phase distributions in silicon after indentation with Berkovich and spherical indenters. Acta Mater. 53, 4795 (2005).CrossRefGoogle Scholar
Zarudi, I. and Zhang, L.C.: Structure changes in mono-crystalline silicon subjected to indentation—Experimental findings. Tribol. Int. 32, 701 (1999).CrossRefGoogle Scholar
Pizani, P.S., Jasinevicius, R.G., and Zanatta, A.R.: Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation. Appl. Phys. Lett. 89, 031917 (2006).CrossRefGoogle Scholar
Gerbig, Y.B., Stranick, S.J., and Cook, R.F.: Direct observation of phase transformation anisotropy in indented silicon studied by confocal Raman spectroscopy. Phys. Rev. B 83, 205209 (2011).CrossRefGoogle Scholar
Ruffell, S., Bradby, J.E., Williams, J.S., and Munroe, P.: Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon. J. Appl. Phys. 102, 063521 (2007).CrossRefGoogle Scholar
Bradby, J.E., Williams, J.S., Wong-Leung, J., Swain, M.V., and Munroe, P.: Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon. Appl. Phys. Lett. 77, 3749 (2000).CrossRefGoogle Scholar
Ruffell, S., Bradby, J.E., Williams, J.S., and Warren, O.L.: An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon. J. Mater. Res. 22, 578 (2007).CrossRefGoogle Scholar
Wall, M.A. and Dahmen, U.: An in situ nanoindentation specimen holder for a high voltage transmission electron microscope. Microsc. Res. Tech. 42, 248 (1998).3.0.CO;2-M>CrossRefGoogle Scholar
Fujisawa, N., Williams, J.S., and Swain, M.V.: On the cyclic indentation behavior of crystalline silicon with a sharp tip. J. Mater. Res. 22, 2992 (2007).CrossRefGoogle Scholar
Zarudi, I., Zhang, L.C., and Swain, M.V.: Behavior of monocrystalline silicon under cyclic microindentations with a spherical indenter. Appl. Phys. Lett. 82, 1027 (2003).CrossRefGoogle Scholar
Fujisawa, N., Ruffell, S., Bradby, J.E., Williams, J.S., Haberl, B., and Warren, O.L.: Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions. J. Appl. Phys. 105, 106111 (2009).CrossRefGoogle Scholar
Huang, H., Zhao, H.W., Zhang, Z.Y., Yang, Z.J., and Ma, Z.C.: Influences of sample preparation on nanoindentation behavior of a Zr-based bulk metallic glass. Materials 5, 1033 (2012).CrossRefGoogle ScholarPubMed
Jian, S.R., Chen, G.J., and Juang, J.Y.: Nanoindentation-induced phase transformation in (110)-oriented Si single-crystals. Curr. Opin. Solid State Mater. Sci. 14, 69 (2010).CrossRefGoogle Scholar
Novikov, N.V., Dub, S.N., Milman, Y.V., Gridneva, I.V., and Chugunova, S.I.: Application of nanoindentation method to study a semiconductor-metal phase transformation in silicon. J. Superhard Mater. 18, 32 (1996).Google Scholar
Crain, J., Ackland, G.J., Maclean, J.R., Piltz, R.O., Hatton, P.D., and Pawley, G.S.: Reversible pressure-induced structural transitions between metastable phases of silicon. Phys. Rev. B 50, 13043 (1994).CrossRefGoogle ScholarPubMed