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Interfacial electronic structures at Fe/pentacene/Fe interfaces

Published online by Cambridge University Press:  03 March 2011

Yu-Zhan Wang
Affiliation:
Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
Xing-Yu Gao*
Affiliation:
Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
Andrew Wee T. S.
Affiliation:
Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
Dong-Chen Qi
Affiliation:
Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
Shi Chen
Affiliation:
Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
*
Email address for correspondence: phygaoxy@nus.edu.sg
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Abstract

We investigate the interfacial electronic structures of the heterojunction Fe/pentacene/Fe on Cu(100) substrate, using synchrotron-based photoemission spectroscopy. No chemical reaction is observed at either Fe/pentacene or pentacene/Fe interface. The hole injection barrier was estimated to be about 0.95 eV between pentacene and under the Fe thin film. C K-edge NEXAFS revealed that the long axis of pentacene molecule was almost perpendicular to the surface plane. With increasing Fe thickness deposited on pentacene film, the pentacene's HOMO shifts to higher binding energy whereas the C 1s binding energy showed an interesting unusual behaviour due to the initial band bending gradually suppressed by the increasing core-hole screening effect.

Type
Poster paper
Copyright
Copyright © Diamond Light Source Ltd 2011

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References

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