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Pit nucleation in compound semiconductor thin films

Published online by Cambridge University Press:  01 February 2011

Mathieu Bouville ,
Michael L. Falk  and
Joanna Mirecki Millunchick
Mathieu Bouville
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109–2136
Michael L. Falk
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109–2136
Joanna Mirecki Millunchick
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109–2136
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Abstract

Pit nucleation has been observed in a variety of semiconductor thin films. We present a model in which pit nucleation is considered to arise from a near-equilibrium nucleation process in which the adatom concentration plays an important role. Although pits relieve elastic energy more efficiently than islands, pit nucleation is prevented if the adatom concentration is too high. Inhomogeneities in the adatom density on the surface due to three-dimensional islands enhance pit nucleation. Thermodynamic considerations predict several different growth regimes in which pits may nucleate at different stages of growth depending on the materials system and growth conditions. However kinetics must be taken into account to make direct comparisons to experimental observations. These comparisons show good agreement given the uncertainties in quantifying experimental parameters such as the surface energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T3.24
Copyright
Copyright © Materials Research Society 2004

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References

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