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Measurements of Polarization Switching in LiNbO3-type ZnSnO3/ZnO Nanocomposite Thin Films

Published online by Cambridge University Press:  16 March 2015

Devajyoti Mukherjee ,
Mahesh Hordagoda ,
Corisa Kons ,
Anuja Datta ,
Sarath Witanachchi  and
Pritish Mukherjee
Devajyoti Mukherjee
Affiliation:
Center for Integrated Functional Materials & Department of Physics, University of South Florida, Tampa, Florida 33620, USA Florida Cluster for Advanced Smart Sensor Technologies & Department of Physics, University of South Florida, Tampa, Florida 33620, USA
Mahesh Hordagoda
Affiliation:
Center for Integrated Functional Materials & Department of Physics, University of South Florida, Tampa, Florida 33620, USA
Corisa Kons
Affiliation:
Florida Cluster for Advanced Smart Sensor Technologies & Department of Physics, University of South Florida, Tampa, Florida 33620, USA
Anuja Datta
Affiliation:
Florida Cluster for Advanced Smart Sensor Technologies & Department of Physics, University of South Florida, Tampa, Florida 33620, USA
Sarath Witanachchi
Affiliation:
Center for Integrated Functional Materials & Department of Physics, University of South Florida, Tampa, Florida 33620, USA Florida Cluster for Advanced Smart Sensor Technologies & Department of Physics, University of South Florida, Tampa, Florida 33620, USA
Pritish Mukherjee
Affiliation:
Center for Integrated Functional Materials & Department of Physics, University of South Florida, Tampa, Florida 33620, USA Florida Cluster for Advanced Smart Sensor Technologies & Department of Physics, University of South Florida, Tampa, Florida 33620, USA
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Abstract

We report the measurements of ferroelectricity in LiNbO3 (LN)-type ZnSnO3 /ZnO nanocomposite thick films deposited on Pt-Si substrates using a novel combined chemical/physical technique. Phase-pure LN-type ZnSnO3 nanorods (NRs) were first synthesized using a low temperature solvothermal process and characterized in detail using X-ray diffraction, electron microscopy and Raman spectroscopy. The prototype device for polarization measurements was fabricated by depositing the as-prepared LN-type ZnSnO3 NRs onto conducting Pt-Si substrates (also served as bottom electrodes). A dielectric filler-layer of polycrystalline ZnO was deposited on top using pulsed laser deposition to fabricate LN-type ZnSnO3 /ZnO nanocomposite films. Polarization measurements of the Pt/ZnSnO3+ZnO/Pt nanocomposite capacitors at 300K showed indication of polarization switching in the hysteresis loops with a remanent polarization (Pr) of 13 μC/cm2 at a low applied voltage of 8 V. The work provides information on the coherent design of future FE memory devices based on the emerging non-toxic Pb-free material LN-ZnSnO3.

Keywords

nanostructureferroelectricitysolution deposition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 111 - 116
Copyright
Copyright © Materials Research Society 2015 

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