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Secondary Ion Images of Impurities at Grain Boundaries in Polycrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

Gary A. Pollock ,
V. R. Deline  and
B. K. Furman
Gary A. Pollock
Affiliation:
Arco Solar, Inc., 20554 Plummer Street, Chatsworth, California 91311, USA
V. R. Deline
Affiliation:
Charles Evans & Associates, 1670 South Amphlett Boulevard, San Mateo, California 94402, USA
B. K. Furman
Affiliation:
Charles Evans & Associates, 1670 South Amphlett Boulevard, San Mateo, California 94402, USA
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Abstract

A CAMECA IMS-3F secondary ion microscope has been used to investigate the presence of impurities in cast polycrystalline silicon wafers and to determine their lateral distribution. Cesium and oxygen ion bombardment were used to selectively detect potential impurities and extract their lateral distribution with submicron lateral resolution.Images of H, C, O, P, and Cu segregated in grain boundaries have been obtained from polycrystalline silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 71
Copyright
Copyright © Materials Research Society 1982

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References

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