Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-25T22:17:07.541Z Has data issue: false hasContentIssue false
  • English
  • Français

Improved Abruptness of Si/Sin Interface by ArF Excimer-Laser Pre-Annealing to Sin

Published online by Cambridge University Press:  15 February 2011

Yasutaka Uchida  and
Masakiyo Matsumura
Yasutaka Uchida
Affiliation:
Department of Electronics and Information Sciences, Nishi–Tokyo University, Uenohara–machi, Kitatsuru–gun, Yamanashi 409–01, JAPAN.
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, Oh–okayama, Meguro–ku, Tokyo 152, JAPAN.
Get access

Abstract

XPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 105
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Takabatake, M., Ohwada, J., Ono, Y. A., Mimura, A. and Konishi, N., IEEE Trans. Electron Devices ED–38 (1991) 1303.Google Scholar
[2] Kaneko, T., Hosokawa, Y., Tadauchi, M., Kita, Y. and Andoh, H., IEEE Trans. Electron Devices ED–38 (1991) 1086.Google Scholar
[3] Serikawa, T., Shirai, S., Okamoto, A. and Suyama, S., IEEE Trans. Electron Devices ED–36 (1989) 1929.Google Scholar
[4] Sera, K., Okumura, F., Uchida, H., Itoh, S., Kaneko, S. and Hotta, K., IEEE Trans. Electron Devices ED–36 (1989) 2868.Google Scholar
[5] Kuriyama, H., Kiyama, S., Noguchi, S., Kuwahara, T., Ishida, S., Nohda, T., Sano, K., Iwata, H., Tsuda, S. and Nakano, S., Extended Abstract of Int'l. Electron Devices Meet. 1991 (1991) 563.Google Scholar
[6] Zhang, H., Kusumoto, N., Inushima, T. and Yamazaki, S., IEEE Electron Device Lett. EDL–13 (1992) 297.Google Scholar
[7] Shimizu, K., Sugiura, O. and Matsumura, M., IEEE Trans. Electron Devices ED–40 (1993) 112.Google Scholar
[8] Shimizu, K., Nakamura, K., Higashimoto, M., Sugiura, O. and Matsumura, M., Jpn. J. Appl. Phys. 32 (1993) 452.Google Scholar
[9] Kobayashi, I., Ogawa, T. and Hotta, S., Jpn. J. Appl. Phys. 31 (1992) 336.Google Scholar
[10] Ahn, B. C., Kanoh, H., Sugiura, O. and Matsumura, M., Conf. Record of the 1991 Int'l. Display Research Conference, (1991) 85.Google Scholar