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Epitaxial Growth of GaAs on 4-Inch Diameter Silicon Substrates by OMCVD.

Published online by Cambridge University Press:  28 February 2011

Jack P. Salerno ,
J. W. Lee ,
R. E. McCullough  and
R. P. Gale
Jack P. Salerno
Affiliation:
Kopin Corporation, Taunton, MA 02780
J. W. Lee
Affiliation:
Kopin Corporation, Taunton, MA 02780
R. E. McCullough
Affiliation:
Kopin Corporation, Taunton, MA 02780
R. P. Gale
Affiliation:
Kopin Corporation, Taunton, MA 02780
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Abstract

GaAs epitaxial layers grown on Si substrates up to 4 inches in diameter by OMCVD are characterized with respect to the materials parameters important for their application for device and circuit manufacturing. The layers are characterized using commercial flatness and surface quality measurement instrumentation, x-ray diffraction, Schottky diode characteristics, and photoluminescence. The 4-inch diameter GaAs epilayers are a singleoriented phase and are of comparable quality to GaAs epilayers grown on smaller diameter Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 119
Copyright
Copyright © Materials Research Society 1987

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