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Intrinsic N-Type Modulation Doping in Inp-Based Heterostructures

Published online by Cambridge University Press:  10 February 2011

W.M. Chen ,
I.A. Buyanova ,
A. Buyanov ,
W.G. Bi  and
C.W. Tu
W.M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
I.A. Buyanova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
A. Buyanov
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
W.G. Bi
Affiliation:
Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093–0407, USA
C.W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093–0407, USA
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Abstract

We propose and demonstrate a new doping approach, i.e. intrinsic doping, for n-type modulation doping in InP-based heterostructures. Instead of the conventional method of n-type doping by shallow donor impurities, grown-in intrinsic defects are utilized to provide the required doping without external doping sources. The success of this approach is clearly demonstrated by our results from InGaAs/InP heterostructures, where the required n-type doping in the InP barriers is provided by Pin antisites, preferably introduced during off-stoichiometric growth of InP at low temperatures (LT-InP) by gas source molecular beam epitaxy. A twodimensional electron gas (2DEG) is shown to be formed near the InGaAs/InP heterointerface as a result of electron transfer from the LT-InP to the InGaAs active layer, from studies of Shubnikov-de Haas oscillations and photoluminescence. The concentration of the 2DEG is determined to be as high as 1.15×1012 cm−2, where two subbands of the 2DEG are readily occupied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 21
Copyright
Copyright © Materials Research Society 1996

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