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Spin Relaxation Spectroscopy of the D-Center in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

Sufi Zafar  and
E. A. Schiff
Sufi Zafar
Affiliation:
Department of Physics, Syracuse University, Syracuse, New York 13244-1130
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, New York 13244-1130
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Abstract

Measurements of the dependence of the D-center electron paramagnetic resonance absorption signal upon the incident microwave power are reported in undoped hydrogenated amorphous silicon (a-Si:H) for specimens prepared at differing deposition temperatures and also as the state of a given specimen was varied by illumination and subsequent annealing. These measurements are sensitive to electron spin relaxation processes of the D-center. Substantial variation in spin-relaxation behavior was found, corresponding to approximately one order of magnitude in the spin relaxation rate; no significant variations in absorption lineshape were observed. A model for these spin relaxation observations invoking two differing local microstructures near the D-center is proposed. The model indicates that illumination increases the density of defects in one microstructure but can irreversibly diminish the density in a second.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 113
Copyright
Copyright © Materials Research Society 1989

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References

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