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Gold-Silicon Interfaces: High Resolution Electron Microscopy Reactions. Precipitation and Subsurface Gettering

Published online by Cambridge University Press:  26 February 2011

R. W. Carpenter  and
M. J. Kim
R. W. Carpenter
Affiliation:
Center for Solid State Science. Arizona State University. Tempe. AZ 85287-1704
M. J. Kim
Affiliation:
Center for Solid State Science. Arizona State University. Tempe. AZ 85287-1704
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Abstract

Deposition of Au on exsitu cleaned (100) Si wafers resulted in the formation of a discontinuous polvcrvstalline Au layer containing lattice defects. On parts of the interface Au and Si were separated by a thin oxide layer, but elsewhere were in direct contact, with no evidence of metastable phase formation. Post deposition heating to 1000°C. well above the 370°C eutectic temperature of the system, caused formation of a reaction zone at the interface, and disappearance of the thin oxide layer. No amorphous phases formed during cooling. Quenching produced small Au precipitates in Si-rich regions. If the wafer contained dislocations. Au precipitation was observed on subboundaries directly connected to the Au/Si interface, but not on dislocations remote from the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 153
Copyright
Copyright © Materials Research Society 1988

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References

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