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High Voltage P-N Junction Diodes in Silicon Carbide Using Field Plate Edge Termination

Published online by Cambridge University Press:  10 February 2011

R. K. Chilukuri ,
P. Ananthanarayanan ,
V. Nagapudi  and
B. J. Baliga
R. K. Chilukuri
Affiliation:
Power Semiconductor Research Center, North Carolina State University Raleigh, NC 27606, ravi@apollo.psrc. ncsu.edu
P. Ananthanarayanan
Affiliation:
Power Semiconductor Research Center, North Carolina State University Raleigh, NC 27606, ravi@apollo.psrc. ncsu.edu
V. Nagapudi
Affiliation:
Power Semiconductor Research Center, North Carolina State University Raleigh, NC 27606, ravi@apollo.psrc. ncsu.edu
B. J. Baliga
Affiliation:
Power Semiconductor Research Center, North Carolina State University Raleigh, NC 27606, ravi@apollo.psrc. ncsu.edu
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Abstract

In this paper, we report the successful use of field plates as planar edge terminations for P+-N as well as N+-P planar ion implanted junction diodes on 6H- and 4H-SiC. Process splits were done to vary the dielectric material (SiO2 vs. Si3N4), the N-type implant (nitrogen vs. phosphorous), the P-type implant (aluminum vs. boron), and the post-implantation anneal temperature. The nitrogen implanted diodes on 4H-SiC with field plates using SiO2 as the dielectric, exhibited a breakdown voltage of 1100 V, which is the highest ever reported measured breakdown voltage for any planar ion implanted junction diode and is nearly 70% of the ideal breakdown voltage. The reverse leakage current of this diode was less than 1×10−5 A/cm2 even at breakdown. The unterminated nitrogen implanted diodes blocked lower voltages (∼840V). In contrast, the unterminated aluminum implanted diodes exhibited higher breakdown voltages (∼80OV) than the terminated diodes (∼275V). This is attributed to formation of a high resistivity layer at the surface near the edges of the diode by the P-type ion implant, acting as a junction termination extension. Diodes on 4H-SiC showed higher breakdown than those on 6H-SiC. Breakdown voltages were independent of temperature in the range of 25 °C to 150 °C, while the leakage currents increased slowly with temperature, indicating surface dominated components.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 81
Copyright
Copyright © Materials Research Society 1999

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References

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