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Nucleation of Oxygen Precipitates in a Quenched Czochralski Silicon Crystal

Published online by Cambridge University Press:  03 September 2012

A. Ikari ,
H. Haga ,
O. Yoda ,
A. Uedono  and
Y. Ujihira
A. Ikari
Affiliation:
Electronics Research Labs., Nippon Steel Corp., 3434 Shimata Hikari 743, Japan
H. Haga
Affiliation:
Electronics Research Labs., Nippon Steel Corp., 3434 Shimata Hikari 743, Japan
O. Yoda
Affiliation:
Takasaki Radiation Chemistry Research Establishment, JAERI,, Takasaki, Gunma 370–12, Japan
A. Uedono
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan
Y. Ujihira
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Abstract

We have studied the nucleation of oxygen precipitates in Czochralski (Cz) Si crystal quenched from high temperature (1390°C). We observed that the oxygen precipitation was enhanced by the quenching treatment. We found the density of precipitates in the quenched crystal depended on quenching temperature and that nuclei for oxygen precipitates were introduced during quenching. We studied these nuclei using infrared absorption (IR) and positron annihilation techniques. In order to clarify the state of the nuclei, the quenched specimens were irradiated with 3-MeV electrons at a dose of 1×1018e/cm2 and vacancy-oxygen complexes were introduced. Positron lifetime spectra and IR absorption spectra for these specimens were measured as a function of isochronal annealing temperature. From the annealing behavior of the vacancy-oxygen complexes, it was found that oxygen clusters are introduced by the quenching and these clusters are the nuclei for the enhanced precipitation of the quenched Si crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 69
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Lin, W. in Semiconductor Silicon 1990, edited by Huff, R., Barraclough, K. G. and Chikawa, J. (The Electrochemical Society, Montreal, 1990) p. 569.Google Scholar
2. Harada, H., Abe, T. and Chikawa, J. in Semiconductor Silicon 1986, edited by Huff, H. R., Abe, T. and Kolbesen, B. (Electrochemical Society, Boston, 1986) p. 76.Google Scholar
3. Hara, A., Fukuda, T., Miyabo, T. and Hirai, I., J. Appl. Phys. 66, 3958 (1989).CrossRefGoogle Scholar
4. Dannefaer, S. in Defect Control in Semiconuctors, edited by Sumino, K. (Elsevier Science Publishers B. V. 1990) p. 1561.Google Scholar
5. Watkins, G. D., in Point Defects in Solids Vol. 2, edited by Crawford, J. H. Jr, and Slifkin, L.M. (Plenum Press, New York 1984) p. 333 Google Scholar
6. Baghadadi, A., Bullis, W. M., Croarkin, M. C., Li, Y.-z., Scace, R. I., Series, R. W., Stall-hofer, P. and Watanabe, M., J. Electrochem. Soc. 136, 2015 (1989).Google Scholar
7. Kirkegaard, P., Eldrup, M., Mogensen, O. E. and Perersen, N. J., Comp. Phys. Commun. 23, 307 (1981).CrossRefGoogle Scholar
8. Corbett, J. W., Watkins, G. D., Chrenko, R. M. and McDonald, R. S., Phys. Rev. 121, 1015 (1961).Google Scholar
9. Stein, H. J., Appl. Phys. Lett. 48, 1540 (1986).Google Scholar
10. Svensson, B. G. and Lindstrom, J. L., Phys. Rev. B34, 8709 (1986).CrossRefGoogle Scholar
11. Mascher, P., Dannefaer, S. and Kerr, D., Mat. Sci. Forum 38–41, 1157 (1989).Google Scholar
12. Corbett, T. W., Karins, J.P. and Tan, T.Y., Nucl. Instrum&Methods 182/183. 457 (1981).Google Scholar