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Organic/Inorganic Hybrid-Type Nonvolatile Memory Thin-Film Transistor on Plastic Substrate below 150°C

Published online by Cambridge University Press:  15 July 2011

Sung-Min Yoon ,
Shinhyuk Yang ,
Soon-Won Jung ,
Sang-Hee Ko Park ,
Chun-Won Byun ,
Min-Ki Ryu ,
Himchan Oh ,
Kyounghwan Kim ,
Chi-Sun Hwang  and
Kyoung-Ik Cho
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Sung-Min Yoon
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Shinhyuk Yang
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Soon-Won Jung
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Sang-Hee Ko Park
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Chun-Won Byun
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Min-Ki Ryu
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Himchan Oh
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Kyounghwan Kim
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Chi-Sun Hwang
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Kyoung-Ik Cho
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
Byoung-Gon Yu
Affiliation:
Convergence Components & Material Research Lab., ETRI, Daejeon 305-700, Korea
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Abstract

An organic/inorganic hybrid-type nonvolatile memory TFT was proposed as a core device for the future flexible electronics. The structural feature of this memory TFT was that a ferroelectric copolymer and an oxide semiconductor layers were employed as a gate insulator and an active channel, respectively. The memory TFT with the structure of Au/poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO/Ti/Au/Ti/poly(ethylene naphthalate) could be successfully fabricated at the process temperature of below 150°C. It was confirmed that the TFT well operated as a memory device even under the bending situations.

Keywords

memoryferroelectricsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f09-10
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

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