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Stress Evolution During Fe(001) Epitaxy on GaAs(001)

Published online by Cambridge University Press:  17 March 2011

R. Koch ,
R. Nötzel ,
B. Wassermann  and
G. Wedler
R. Koch
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin
R. Nötzel
Affiliation:
Semiconductor Physics, University of Technology, Eindhoven, The Netherlands
B. Wassermann
Affiliation:
Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195, Berlin
G. Wedler
Affiliation:
Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195, Berlin
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Abstract

Fe films on GaAs substrates have evolved as a model system for the integration of magnetic materials with semiconductors. We report on in situ stress measurements of Fe/GaAs(001), which enlighten the dynamics of the interface formation of this important magnetic metal/semiconductor system. At deposition temperatures of 300 K and 450 K, the stress evolution during growth is very similar. In Fe films thicker than 6–7 nm, the stress is compressive owing to the misfit between the lattices of Fe and GaAs. Thinner films surprisingly are dominated by a tensile stress contribution due to considerable As (and Ga) interdiffusion even at 300 K. Magnetization and in-plane anisotropy of both films are bulk-like.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 690: Symposium F – Spintronics , 2001 , F6.10
Copyright
Copyright © Materials Research Society 2002

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References

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