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Grain Growth by Digm in Ni Thin Film Under High Tensile Stress

Published online by Cambridge University Press:  10 February 2011

Zhengyi Jia ,
G. Z. Pan  and
K. N. Tu
Zhengyi Jia
Affiliation:
Department of Material Science and Engineering, University of California at Los Angeles, CA 90025-1595
G. Z. Pan
Affiliation:
Department of Material Science and Engineering, University of California at Los Angeles, CA 90025-1595
K. N. Tu
Affiliation:
Department of Material Science and Engineering, University of California at Los Angeles, CA 90025-1595
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Abstract

Electron beam evaporated Ni thin films are found to have tensile stress of 1.2 Gpa. The stress is relieved upon heating, accompanied by grain growth. The calculated stress matches the experimental result and a mechanism of grain growth is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 95
Copyright
Copyright © Materials Research Society 1998

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References

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