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Low Temperature Fabrication of Sol-Gel Derived Dielectric (Ba,Sr)TiO3 Thin Films

Published online by Cambridge University Press:  31 January 2011

Hideaki Sakurai ,
Toshiaki Watanabe  and
Nobuyuki Soyama
Hideaki Sakurai
Affiliation:
h-sakura@mmc.co.jp, Mitsubishi Materials Corporation, Naka-shi, Japan
Toshiaki Watanabe
Affiliation:
tswata@mmc.co.jp, Mitsubishi Materials Corporation, Sanda, Hyogo, Japan
Nobuyuki Soyama
Affiliation:
soyama@mmc.co.jp, Mitsubishi Materials Corporation, Sanda, Hyogo, Japan
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Abstract

We studied the nucleation and crystallization of sol-gel derived (Ba0.7Sr0.3)TiO3 [BST(70/30)] thin films at low temperatures between 500 to 600°C on Pt(111)/TiO2/SiO2/Si substrates by a process using a combination of 2-ethyl-hexanoate based solutions and modified film preparation. We found that BST films could be crystallized at 500°C and that the films obtained had a columnar-like grainy microstructure with favorable electrical characteristic such as high relative permittivity (ɛr) of 310 at 10 kHz and high tunability of 51% at a bias electric field of 250 kV/cm. Moreover, we investigated annealing temperature dependence of BST(70/30) thin films. The results indicated er and tunability increased with annealing temperature up to 450 and 58%, respectively.

Keywords

sol-gelpyrolysisnucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1199: Symposium F –Multiferroic and Ferroelectric Materials , 2009 , 1199-F03-65
Copyright
Copyright © Materials Research Society 2010

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References

1 Ponds, J. M., Kirchoefer, S. W., Chang, W., Horwitz, J. S., and Chrisey, D. B., Integr. Ferroelectr. 22, 317, (1998).Google Scholar
2 Miranda, F. A., Keuls, F. W. Van, Romanofsky, R. R., and Subramanyam, G., Integr. Ferroelectr. 22, 269, (1998).Google Scholar
3 Baniecki, J. D., Laibowitz, R. B., Shaw, T. W., Duncombe, P. R., Neumayer, D. A., Kotecki, D. E., Shen, H., and Ma, Q. Y., Appl. Phys. Lett. 72, 498, (1998).Google Scholar
4 Konno, M., Iizuka, Y., Tanase, T., and Kobayashi, Y., Sol-Gel, J. Sci. Technol., 33 [3], 315–321, (2005).Google Scholar
5 Hoffmann, S., and Waser, R., J. Euro. Ceram. Soc., 1339–1343, (1999).Google Scholar
6 Ma, X., Wang, S., and Zhang, Y., Key Eng. Mater., 336-338, 69–72, (2007).Google Scholar
7 Hosokura, T., Ando, A., and Sakabe, Y., Key Eng. Mater., 320, 81–84, (2006).Google Scholar
8 Meng, Z., and Peng, D., J. Ceram. Soc. Jpn., 112 [5], S1567–S1570, (2004).Google Scholar
9 Fu, Z., Wu, A., and Vilarinho, P. M., Chem. Mater., 38, 3343–3350, (2006).Google Scholar