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Computer Simulation of Si and C Atoms on SiC Surfaces

Published online by Cambridge University Press:  21 February 2011

C C Matthai ,
G J Moran  and
I Morrison
C C Matthai
Affiliation:
Department of Physics and Astronomy UWCC, Cardiff CF2 3YB, UK
G J Moran
Affiliation:
Department of Physics and Astronomy UWCC, Cardiff CF2 3YB, UK
I Morrison
Affiliation:
Department of Physics and Astronomy UWCC, Cardiff CF2 3YB, UK
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Abstract

The molecular dynamics method employing an empirical potential energy function to describe the Si-C interaction has been used to determine the minimum energy sites for Si and C adatoms on C-terminated SiC (001) substrates. It is found that whereas a single C adatom lies on the carbon dimer bond, this site only becomes energetically favourable for silicon adatoms when they interact to form a dimer pair.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 21
Copyright
Copyright © Materials Research Society 1994

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References

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