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Growth of MonX by Reactive Laser ablation

Published online by Cambridge University Press:  21 February 2011

Randolph E. Treece ,
James S. Horwitz ,
Edward Donovan  and
Douglas B. Chrisey
Randolph E. Treece
Affiliation:
Code 6674, Naval Research Laboratory, Washington, DC 20375.
James S. Horwitz
Affiliation:
Code 6674, Naval Research Laboratory, Washington, DC 20375.
Edward Donovan
Affiliation:
Code 6674, Naval Research Laboratory, Washington, DC 20375.
Douglas B. Chrisey
Affiliation:
Code 6674, Naval Research Laboratory, Washington, DC 20375.
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Abstract

Control of composition and phase of a series of MoNx thin films has been accomplished by reactive pulsed laser deposition (PLD). Molybdenum foil targets were ablated in a background gas of N2/H2 (10%) at pressures ranging from 40 to 120 mTorr. the MoNx films were deposited simultaneously onto (100) MgO and fused silica substrates. the films were characterized by X-ray diffraction (XRD), temperature-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). the composition, phase, and electronic transport properties were found to depend on N2/H2 pressure, substrate temperature, and substrate orientation. the highest superconducting transition temperature (Tc ) was observed in a hexagonal Mo2N film where Tc (onset) ≈ 8 K. IN general, Tc was observed to correlate most closely with the N/Mo ratio. as the ratio of N/Mo increased above optimal M02N composition, Tc decreased. Films grown on MgO generally had higher N/Mo ratios and hence lower Tc values than films deposited on silic A.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 109
Copyright
Copyright © Materials Research Society 1995

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