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Normally-off operation GaN HFET using a thin AlGaN layer for low loss switching devices

Published online by Cambridge University Press:  01 February 2011

Nariaki Ikeda ,
Kazuo Kato ,
Jiang Li ,
Kohji Hataya  and
Seikoh Yoshida
Nariaki Ikeda
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2–4–3 Okano, Nishi-ku, Yokohama, Kanagawa 220–0073, Japan
Kazuo Kato
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2–4–3 Okano, Nishi-ku, Yokohama, Kanagawa 220–0073, Japan
Jiang Li
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2–4–3 Okano, Nishi-ku, Yokohama, Kanagawa 220–0073, Japan
Kohji Hataya
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2–4–3 Okano, Nishi-ku, Yokohama, Kanagawa 220–0073, Japan
Seikoh Yoshida
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2–4–3 Okano, Nishi-ku, Yokohama, Kanagawa 220–0073, Japan
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Abstract

We report on the novel normally-off GaN-based heterojunction field effect transistors (HFETs) on a Si substrate. The AlGaN/AlN/GaN heterostructure was grown using a metalorganic chemical vapor deposition (MOCVD). The HFET for a normally-off operation was fabricated using a precisely controlled thin-AlGaN layer as an electron supply layer. As a result, the HFET was operated at the condition of the positive gate bias. We also characterized the enlarged gate-width devices. The breakdown voltage of FET was over 300 V. A normally-off operation using GaN based HFETs with a thin-AlGaN/AlN/GaN heterostructure on the silicon substrate were thus confirmed for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E6.5
Copyright
Copyright © Materials Research Society 2005

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References

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