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Epitaxial growth of NiSi2 induced by sulfur segregationat the NiSi2/Si(100) interface

Published online by Cambridge University Press:  31 January 2011

Q.T. Zhao ,
S.B. Mi ,
C.L. Jia ,
C. Urban ,
C. Sandow ,
S. Habicht  and
S. Mantl
Q.T. Zhao*
Affiliation:
Institute of Bio- and Nanosystems (IBN1-IT), and Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Jülich GmbH, 52425 Ju¨lich, Germany
S.B. Mi
Affiliation:
Institute of Solid-State Research, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
C.L. Jia
Affiliation:
Institute of Solid-State Research, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
C. Urban
Affiliation:
Institute of Bio- and Nanosystems (IBN1-IT), and Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
C. Sandow
Affiliation:
Institute of Bio- and Nanosystems (IBN1-IT), and Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
S. Habicht
Affiliation:
Institute of Bio- and Nanosystems (IBN1-IT), and Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
S. Mantl
Affiliation:
Institute of Bio- and Nanosystems (IBN1-IT), and Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
*
a) Address all correspondence to this author. e-mail: q.zhao@fz-juelich.de
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Abstract

Epitaxial growth of a NiSi2 layer was observed on S+ ion-implanted Si(100) at a low temperature of 550 °C. Depending on the S+ dose and the Ni thickness, we identified different nickel silicide phases. High quality and uniform epitaxial NiSi2 layers formed at temperatures above 700 °C with a 20-nm Ni on high dose S+ implanted Si(100), whereas no epitaxy was observed for a 36-nm Ni layer. We assume that the presence of sulfur at the silicide/Si(100) interface favors the nucleation of the NiSi2 phase. The S atom distributions showed ultrasteep S depth profiles (3 nm/decade) in the silicon, which results from the snow-plow effect during silicidation and the segregation of S to the interface due to the low solubility of S in both Si and the silicide.

Keywords

AnnealingEpitaxyIon-implantation
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 1 , January 2009 , pp. 135 - 139
Copyright
Copyright © Materials Research Society 2009

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References

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