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Observation of Radiation-Induced Defect Formation in Aluminum by High-Resolution Transmission Electron Microscopy

Published online by Cambridge University Press:  28 February 2011

James M. Howe  and
Mehmet Sarikaya
James M. Howe
Affiliation:
Department of Metallurgical Engineering and Materials Science, Carnegie Mellon University, Pittsburgh, PA 15213
Mehmet Sarikaya
Affiliation:
Department of Materials Science and Engineering, University of Washington, Seattle, WA
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Abstract

High-resolution transmission electron microscopy was used to investigate the structure and growth kinetics of early-stage radiation-induced defects in commercially pure Al. The majority of defects were determined to be single and multiple interstitial Frank-partial loops, although some perfect dislocation loops and vacancy loops were also observed. The growth rates of loops with final radii less than 8 nm were recorded in situ and were found to be approximately 0.2 nm/sec for an electron density of about 8×1018 electrons/cm2.sec. These results are similar to previous high-voltage electron microscope analyses performed on larger radiation-induced defects in Al alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 41
Copyright
Copyright © Materials Research Society 1989

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