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Single-Axis Projection Scheme for Conducting Sequential Lateral Solidifica-tion of Si Films for Large-Area Electronics

Published online by Cambridge University Press:  17 March 2011

Alexander Limanov  and
Vladimir Borisov
Alexander Limanov
Affiliation:
Institute of Crystallography Russian Academy of Sciences, Moscow
Vladimir Borisov
Affiliation:
TRINITI, Troitsk, Moscow region
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Abstract

This paper deals with some results of research in SLS performed in the excimer laser laboratory of TRINITI research institute, Russia, where different types of excimer lasers have been developed and manufactured. The research used a new simple SLS approach based on single-axis (i.e., cylinder) projection optics. The method employs a long single melting line extended many centimeters in length. The line is formed by projection through a single slit in a bulk metal mask. Some aspects of the efficiency, potential, and technical challenge of the method are discussed. This method is particularly useful with low pulse energy and high frequency excimer lasers, and one of the most efficient ways of providing directionally crystallized Si films over a large area. Several types of excimer lasers were tested for the SLS technique. It was found that among various parameters, pulse duration is a more important one, e.g., an increase in pulse duration from 25 to 150 ns results in enlargement of lateral growth distance by about three times.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D10.1.1
Copyright
Copyright © Materials Research Society 2001

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