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The Recrystallization Properties of Poly-GexSi1-xON SiO2/Si

Published online by Cambridge University Press:  10 February 2011

N. Jiang ,
J.R. Ma ,
M. Wu ,
X.D. Huang ,
S.L. Gu ,
S.D. Yu ,
L.Q. Hu  and
Y.D. Zheng
N. Jiang
Affiliation:
Department of Physics, Nanijing University, Nanjing, 210093, P.R. China, ydzheng@netra.nju.edu.cn
J.R. Ma
Affiliation:
Department of Physics, Nanijing University, Nanjing, 210093, P.R. China, ydzheng@netra.nju.edu.cn
M. Wu
Affiliation:
Department of Physics, Nanijing University, Nanjing, 210093, P.R. China, ydzheng@netra.nju.edu.cn
X.D. Huang
Affiliation:
Department of Physics, Nanijing University, Nanjing, 210093, P.R. China, ydzheng@netra.nju.edu.cn
S.L. Gu
Affiliation:
Department of Physics, Nanijing University, Nanjing, 210093, P.R. China, ydzheng@netra.nju.edu.cn
S.D. Yu
Affiliation:
Department of Physics, Nanijing University, Nanjing, 210093, P.R. China, ydzheng@netra.nju.edu.cn
L.Q. Hu
Affiliation:
Department of Physics, Nanijing University, Nanjing, 210093, P.R. China, ydzheng@netra.nju.edu.cn
Y.D. Zheng
Affiliation:
Department of Physics, Nanijing University, Nanjing, 210093, P.R. China, ydzheng@netra.nju.edu.cn
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Abstract

In this paper, we have developed a new way to recrystallize the poly-GeSi on SiO2. 300nm poly-GeSi was grown by RTP/VLP-CVD on SiO2/Si, and then amorphized by 180 keV-Si+ ion implantation with dose of 2×10'4 cm'2. An amorphized region with the damage distribution was formed. After subsequent annealing process, the comparison between the XRD scans and Raman spectra of poly-GeSi and poly-Si indicated that the annealed poly-GeSi was more recrystallized than the poly-Si in the same conditions, this was the inducement of Ge in the annealing process. The segregation of Ge atoms in the heavy damaged region would enhance this inducement. The XTEM showed the longitudinal pattern of GeSi grains which meant the longitudinal sizes were much greater than the horizontal sizes. After annealing process, the final GeSi grain sizes were greater than the poly-Si grain sizes processed in SSIC with the same implantation conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 409
Copyright
Copyright © Materials Research Society 1997

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References

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