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High-k dielectrics for hybrid floating gate memory applications

Published online by Cambridge University Press:  12 June 2012

J.G. Lisoni ,
L. Breuil ,
P. Blomme  and
J. Van Houdt
J.G. Lisoni
Affiliation:
IMEC, Kapeldreef 75, 3001 Heverlee (Leuven), Belgium
L. Breuil
Affiliation:
IMEC, Kapeldreef 75, 3001 Heverlee (Leuven), Belgium
P. Blomme
Affiliation:
IMEC, Kapeldreef 75, 3001 Heverlee (Leuven), Belgium
J. Van Houdt
Affiliation:
IMEC, Kapeldreef 75, 3001 Heverlee (Leuven), Belgium
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Abstract

We report on the materials issues involved in the hybrid floating gate (HFG) device fabrication, where the interpoly dielectric is replaced by an intermetal dielectric (IMD). Indeed, in HFG the dielectric is inserted in between two metal layers in a metal\dielectric\metal stack. The materials of choice were TiN as the metal layer and Al2O3 and HfO2 (and their combination) as IMD. The program/erase performance is discussed based on the dielectric constant and crystallinity of the IMD and the metal-IMD interface characteristics.

Keywords

memorydielectricmetal
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e01-02
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

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