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Instabilities and Point Defects at Step-Free Si(001) and (111) Terraces During High Temperature Annealing

Published online by Cambridge University Press:  15 March 2011

Doohan Lee  and
Jack M. Blakely
Doohan Lee
Affiliation:
Cornell University, Materials Science & Engineering, Ithaca, NY, 14853, U.S.A.
Jack M. Blakely
Affiliation:
Cornell University, Materials Science & Engineering, Ithaca, NY, 14853, U.S.A.
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Abstract

In this paper we describe observations on the stability of extremely large Si(001) and (111) terraces that are formed by a technique described previously. Following annealing at high temperature and quenching, a series of concentric pits of monoatomic depth are observed with spacing between successive pits of the order of several microns; pits do not form on (111) until the terraces get extremely large. The occurrence of small islands or small pits on the terraces of quenched samples gives information on the majority point defect at the annealing temperature. On (001) samples that are slowly cooled from the annealing temperature, it is observed that pairs of atomic steps have formed on the large terrace; we believe that these result from the tendency of the surface to minimize the strain energy associated with the (2 × 1) reconstruction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 587: Symposium O – Substrate Engineering - Paving the Way to Epitaxy , 1999 , O5.8
Copyright
Copyright © Materials Research Society 2000

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