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A Study of Bismuth Induced Levels in CZT Using TEES/TSC

Published online by Cambridge University Press:  31 January 2011

Raji Soundararajan ,
Kelly A. Jones ,
Santosh Swain  and
Kelvin Lynn
Raji Soundararajan
Affiliation:
raji@mail.wsu.edu, Washington State University, Center for Materials Research, Pullman, Washington, United States
Kelly A. Jones
Affiliation:
kelly_jones@wsu.edu, Washington State University, Center for Materials Research, Pullman, Washington, United States
Santosh Swain
Affiliation:
santosh@mail.wsu.edu, Washington State University, Center for Materials Research, Pullman, Washington, United States
Kelvin Lynn
Affiliation:
kgl@wsu.edu, Washington State University, Center for Materials Research, Pullman, Washington, United States
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Abstract

Considering the desirable effects of doping CdTe with heavy elements like Bi, we have grown a Cadmium Zinc Telluride (Zn=10%) ingot with Bi (doping levels ∼1014 to 1015 at/cm3) as the heavy element dopant for use as a room temperature radiation detector, using the Bridgman method. In-spite of a high bulk resitivity (∼1010?cm), and the ability to hold high electric field (>2000 V/cm), these lightly doped crystals had a poor spectral resolution for the Co-57 photo peaks and ??e measurements were so low that these measurement were not reliable. Thermo electric effect spectroscopy (TEES) and thermally stimulated current (TSC) experiments on samples C and F (single crystals close to the tip and the heel of the ingot respectively) have revealed various defect levels in the band gap. Among these defect levels, we have identified and characterized two Bi-related deep levels namely a deep donor level L5 (thermal ionization energy: 0.33[5] to 0.39[5] eV and trap cross-section: 7.1[5] × 10-17 to 2.54 [5] × 10-16 cm2), and a deep acceptor level L8 (thermal ionization energy of 0.82 [5] eV and trap cross-section of 2.59 [5] × 10-12 cm2). These levels were responsible for the observed high electrical resistivity (∼1010 ?*cm) in the CdZnTe samples. From a comparison to studies on Bi doped CdTe samples, level L8 was tentatively associated with the (0/-) transition of (BiCd- - OTe) complex, however is still under study. Since these defect levels also act as trapping centers for charge carriers, in spite of the semi-insulating behavior the samples are poor radiation detectors.

Keywords

Bithermoelectricthermally stimulated current
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1164: Symposium L – Nuclear Radiation Detection Materials–2009 , 2009 , 1164-L10-02
Copyright
Copyright © Materials Research Society 2009

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