Hostname: page-component-7c8c6479df-ph5wq Total loading time: 0 Render date: 2024-03-29T14:02:30.499Z Has data issue: false hasContentIssue false

Fabrication of Prototype Magnetic Coupled Spin-torque Devices for Non-volatile Logic Applications

Published online by Cambridge University Press:  01 February 2011

Larkhoon Leem
Affiliation:
tryon16@stanford.edu, Stanford University, Electrical Engineering, Stanford, California, United States
James S. Harris
Affiliation:
harris@snow.stanford.edu, Stanford University, Electrical Engineering, Stanford, California, United States
Charles Rettner
Affiliation:
rettner@almaden.ibm.com, IBM Almaden Research Center, San Jose, California, United States
Brian Hughes
Affiliation:
briahugh@us.ibm.com, IBM Almaden Research Center, San Jose, California, United States
Xin Jiang
Affiliation:
xinjiang@us.ibm.com, IBM Almaden Research Center, San Jose, California, United States
See-hun Yang
Affiliation:
seeyang@us.ibm.com, IBM Almaden Research Center, San Jose, California, United States
Stuart Parkin
Affiliation:
parkin@almaden.ibm.com, IBM Almaden Research Center, San Jose, California, United States
Get access

Abstract

A Magnetic Coupled Spin-torque Device (MCSTD) is a collective system of three interacting magnetic tunnel junctions (MTJs) that forms a novel magnetic logic gate. The fundamental principle of the MCSTD is the modification of the energy barrier for spin-torque magnetization switching of a central (output) MTJ device arising from changes in the magnetic state of two input MTJ devices. The input MTJs are placed in close proximity of a few tens of nm of the output MTJ such that their magnetic fringing fields are strong enough (> 10 Oersted) to modulate the switching characteristics of the output device. By changing the magnetic states of the two input MTJs four possible net magnetic fields at the center MTJ can be generated. A single MCSTD thereby enables NAND, NOR and XOR operations. In this paper, the fabrication of a prototype MCSTD device is described and preliminary experiment results are reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Allwood, D. A. A., et al. Magnetic domain domain-wall logic logic. Science 309, 16881692 (2002)Google Scholar
[2] Behin-Aein, B., Datta, D., Salahuddin, S., Datta, S., Proposal for an all-spin logic device with built-in memory, Nature Nanotechnology Nanotechnology, DOI: 10.1038 (2010)10.1109/DRC.2010.5551948Google Scholar
[3] Carlton, D. B., Emley, N. C., Tuchfeld, E. Bokor, J. Simulation of nanomagnetbased logic architecture. Nano Lett Lett. 8, 41734178 (2008)10.1021/nl801607pGoogle Scholar
[4] Cowburn, R. P., Welland, M. E. Room temperature magnetic quantum cellular automata. Science 287, 14661468 (2000)Google Scholar
[5] Imre, A. A., et al. Majority logic gate for magnetic quantum quantum-dot cellular automata. Science 311, 205208 (2006)Google Scholar
[6] Khitun, A. A., et al. Spin wave logic circu circuit on silicon platform. Fifth International Conference on Information Technology: New Generations Generations, 11071110 (2008)Google Scholar
[7] Ney, A., et al. Programmable computing with a single magnetoresistive element. Nature 425, 485487 (2003)Google Scholar
[8] Leem, L., Harris, J. S. Magnetic coupled spin spin-torque devices and magnetic ring oscillator. Proc. IEDM doi: 1 10.1109/IEDM.2008.4796640 (2008)Google Scholar
[9] Leem, L., Harris, J. S. Magnetic coupled spin spin-torque devices for nonvolatile logic applications applications. J. Appl. Phys 105, 07D102 (2009)Google Scholar
[10] Chen, E., Current Status and Future Outlook of STT-RAM Technology Technology. 18th Information Storage Industry Consortium Annual Meeting (2008)Google Scholar
[11] Donahue, M. J. and Porter, D. G. and National Institute of Standards and Technology (U.S.) OOMMF user's guide (1999)Google Scholar
[12] Parkin, S.S.P. Spin-Polarized Cur Current in Spin Valve rent Valves and Magnetic Tunnel Junctions. MRS Bulletin 31, (2006)Google Scholar
[13] Driskill-Smith, A.A.G., et al. Electron Electron-beam lithography for the magnetic recording industry: Fabrication of na nanoscale (10nm) thin noscale thin-film read heads. Microelectronic Engineering, 73–74 547552 (2004)Google Scholar
[14] Personal communication with Charles Rettner (2010)Google Scholar