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Mocvd Growth and Properties of Erbium Doped GaAs

Published online by Cambridge University Press:  21 February 2011

Dietrich W. Langer ,
Yabo Li ,
Xiao M. Fang  and
Victoria Coon
Dietrich W. Langer
Affiliation:
Electrical Engineering Department, University of Pittsburgh, Pittsburgh, PA 15261
Yabo Li
Affiliation:
Electrical Engineering Department, University of Pittsburgh, Pittsburgh, PA 15261
Xiao M. Fang
Affiliation:
Microtronics Associates, Inc., 3337 Forbes Ave., Pittsburgh, PA 15213
Victoria Coon
Affiliation:
Microtronics Associates, Inc., 3337 Forbes Ave., Pittsburgh, PA 15213
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Abstract

Erbium doped GaAs was grown by metalorganic chemical vapor deposition using a novel liquid precursor: Tris(n-butylcyclopentadienyl)erbium, Er(C4H9C5H4)3. Growth parameter, i.e. temperature, V/III ratio, Er-vapor flow, were investigated. The maximum erbium incorporation in layers with excellent morphology was 1.2× 1019cm−3. The erbium-related photoluminescence intensity and the incorporated concentrations, as measured by secondary ion mass spectrometry, were correlated. Based on a simple model for, the excitation dependence of the emission, the non-radiative Auger-type process was estimated to be nearly five times that of the energy transfer process from bound excitons to the Er3+ ions, which subsequently resulted in the Er-related light emission. Temperature induced quenching of the emission was found to be dominated by transitions with an activation energy of 74meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 15
Copyright
Copyright © Materials Research Society 1993

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References

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