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Computer Simulation of Sputtering from Two Component Liquid Metal Targets

Published online by Cambridge University Press:  25 February 2011

M. H. Shapiro ,
D. Y. Lo  and
T. A. Tombrello
M. H. Shapiro
Affiliation:
Physics Dept., California State University, Fullerton, CA 92634, U.S.A. and Division of Physics, Mathematics and Astronomy, Caltech, Pasadena, CA 91125, U.S.A.
D. Y. Lo
Affiliation:
Division of Physics, Mathematics and Astronomy, Caltech, Pasadena, CA 91125, U.S.A.
T. A. Tombrello
Affiliation:
Division of Physics, Mathematics and Astronomy, Caltech, Pasadena, CA 91125, U.S.A.
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Abstract

The sputtering of In and Ga atoms from a “liquid” target composedof gallium coveredby a surface monolayer of indium by incident 5 keV Ar+ ions was simulated using the multiple interaction molecular dynamics technique. Yields, energy distributions, and angular distributions of sputtered atoms were obtained at a temperature above the melting point for the eutectic alloy. Similar information was obtained for a pure gallium and a pure indium target. Our results for layer yield ratios and angular distributions are in good qualitative agreement with Dumke's experimental data for the Ar+, In-Ga system. Absolute yields, however, were found to be sensitive to the detailed nature of the two-body potentials used to describe the atom-atom interactions.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 63: Symposium R – Computer-Based Microscopic Description of the Structure and Properties of Materials , 1985 , 31
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Dumke, M.F., PhD thesis, Caltech, 1982; Dumke, M.F. et al., Surface Sci., 124. 407 (1983).CrossRefGoogle Scholar
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