Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-19T16:32:23.409Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanothick Layer Transfer of Hydrogen-implanted Wafer Using Polysilicon Sacrificial Layer

Published online by Cambridge University Press:  01 February 2011

C. H. Huang ,
C. L. Chang ,
Y. Y. Yang ,
T. Suryasindhu ,
W. -C. Liao ,
Y. -H. Su ,
P. W. Li ,
C. -Y. Liu ,
C. S. Lai  and
J. -H. Ting
...Show all authors
C. H. Huang
Affiliation:
93343044@cc.ncu.edu.twNational Central UniversityDept. of Mechanical EngineeringChung-Li N/ATaiwan
C. L. Chang
Affiliation:
93323118@cc.ncu.edu.tw, National Central University, Dept. of Mechanical Engineering, Chung-Li, N/A, N/A, Taiwan
Y. Y. Yang
Affiliation:
93343003@cc.ncu.edu.tw, National Central University, Dept. of Mechanical Engineering, Chung-Li, N/A, N/A, Taiwan
T. Suryasindhu
Affiliation:
teresia_surya@yahoo.com, National Central University, Dept. of Mechanical Engineering, Chung-Li, N/A, N/A, Taiwan
W. -C. Liao
Affiliation:
oceanpiedra@gmail.com, National Central University, Dept. of Mechanical Engineering, Chung-Li, N/A, N/A, Taiwan
Y. -H. Su
Affiliation:
bollboll77@yahoo.com.tw, National Central University, Dept. of Mechanical Engineering, Chung-Li, N/A, N/A, Taiwan
P. W. Li
Affiliation:
pwli@ee.ncu.edu.tw, National Central University, Dept. of Electrical Engineering, Chung-Li, Taiwan
C. -Y. Liu
Affiliation:
chengyi@cc.ncu.edu.tw, National Central University, Dept. of Chemical and Materials Engineering, Chung-Li, N/A, N/A, Taiwan
C. S. Lai
Affiliation:
cslai@mail.cgu.edu.tw, Chang Gung University, Department and Graduate Institute of Electrical Engineering, Kwei-Shan, N/A, N/A, Taiwan
J. -H. Ting
Affiliation:
jting@mail.ndl.org.tw, National Nano Device Laboratories, Hsinchu, N/A, N/A, Taiwan
C. S. Chu
Affiliation:
andy.chu@usoi.com, United SOI Corporation, Berkeley, CA, 94707, United States
C, -S Lee
Affiliation:
cslee@phy.ncu.edu.tw, National Central University, Dept. of Physics, Chungli, N/A, 320, Taiwan
T. -H. Lee
Affiliation:
benlee@ncu.edu.tw, National Central University, Dept. of Mechanical Engineering, Chung-Li, N/A, N/A, Taiwan
Get access

Abstract

An ion implantation-wafer bonding-layer splitting based 2-D nanostructure material fabrication method using polysilicon sacrificial layer for forming nanothick SOI materials without using post-thinning processes is presented in this paper. Polysilicon layer was initially deposited on the thermal oxidized surface of silicon wafer prior to the ion implantation step to achieve the hydrogen-rich buried layer which depth from the top surface is less than 100 nm in the as-implanted silicon wafer. Before this as-implanted wafer being bonded with a handle wafer, the polysilicon layer was removed by a wet etching method. A nanothick silicon layer was then successfully transferred onto a handle wafer after wafer bonding and layer splitting steps. The thickness of the final transferred silicon layer was 100 nm measured by transmission electron microscopy (TEM).

Keywords

nanostructurenanoscaleion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 921: Symposium T – Nanomanufacturing , 2006 , 0921-T05-02
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Colinge, Jean-Pierre, Silicon-on-Insulator Technology: Materials to VLSI, 3rd edition, Kluwer, Boston (2004).Google Scholar
2. Pelloie, Jean-Luc and Auberton-Hervé, André, “A new generation of IC processing: low-power, high-performance SOI CMOS,” Solid State Technology, Vol. 44, 63 (2001).Google Scholar
3. Celler, G. K. and Cristoloveanu, S., “Frontiers of silicon-on-insulator,” J. Appl. Phys., Vol. 93, 9, p.4955 (2003).Google Scholar
4. Bruel, M., “Application of hydrogen ion beams to silicon on insulator material technology,” Nucl. Instrum. Methods Phys. Res. B., Vol. 108, p.313, (1996).Google Scholar
5. Feng, X.-Q. and Huang, Y., “Mechanics of Smart-Cut® technology,” International Journal of Solids and Structures, Vol. 41, p.4299 (2004).Google Scholar
6. Qian, C. and Terreault, B., “Blistering of silicon crystals by low keV hydrogen and helium ions,” J. Appl. Phys., Vol. 90, 10, p.5152 (2001).Google Scholar
7. Qian, C., Terreault, B. and Gujrathi, S.C., “Layer splitting in Si by H+He ion co-implantation: channeling effect limitation at low energy,” Nucl. Instrum. Methods Phys. Res. B, Vol.175177, p.711 (2001).Google Scholar
8. Srikrishnan, K. V. et al., “Smart-Cut® process for the production of thin semiconductor material films,” US Patent 5882987 (1999).Google Scholar
9. Kovacs, G. T. A., Maluf, N. I., Petersen, K. E., “Bulk Micromachining of Silicon,” Proceedings of the IEEE, Vol. 86, No. 8, p.1536 (1998).Google Scholar
10. Elwenspoek, M., “The form of etch rate minima in wet chemical anisotropic etching of silicon,” Journal of Micromechanical and Microengineering, Vol. 6, p.405 (1996).Google Scholar
11. Tabata, O., Asahi, R., Funabashi, H., Sugiyama, S., “Anisotropic etching of silicon in (CH3)4NOH solutions,” Proceedings of the 6th International Conference on Solid-State Sensors and Actuators, p.815 (1991).Google Scholar