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Mechanistic Studies of Wafer Bonding and Thin Silicon Film Exfoliation

Published online by Cambridge University Press:  15 March 2011

Y.J. Chabal ,
E. D. Isaacs  and
M.K. Weldon
Y.J. Chabal
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, (USA)
E. D. Isaacs
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, (USA)
M.K. Weldon
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, (USA)
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Abstract

In this paper, we review and highlight the central role that infrared spectroscopy has played in elucidating the microscopic details of the bonding and exfoliation processes and we introduce a novel technique for imaging and measuring strain with submicron resolution. The mechanism for chemical bond formation between two interfaces is derived from monitoring the chemical evolution of interfacial species as a function of annealing. The mechanism for silicon shearing upon Himplantation/annealing is understood as an evolution of H-passivated point defects into H-stabilized internal surfaces, together with H2 formation. The nucleation and propagation of microbubbles that form prior to exfoliation is imaged with x-rays and a detailed strain map in the vicinity of bubbles just prior to exfoliation can be made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 587: Symposium O – Substrate Engineering - Paving the Way to Epitaxy , 1999 , O4.4
Copyright
Copyright © Materials Research Society 2000

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