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Orientation and Temperature Dependence of Electron-Induced Crystallization in Si and Ge

Published online by Cambridge University Press:  15 February 2011

E. P. Hollar ,
I. M. Robertson  and
I. Jeničič
E. P. Hollar
Affiliation:
University of Illinois, 1304 W Green, Urbana IL 61801, e-hollar@uiuc.edu
I. M. Robertson
Affiliation:
University of Illinois, 1304 W Green, Urbana IL 61801
I. Jeničič
Affiliation:
Jožef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
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Abstract

Si and Ge samples of different substrate orientations were implanted with 50 keV Xe+ ions to a dose around 1011 ions/cm2 where the amorphous zones, created by individual ions, remained spatially isolated. The samples were subsequently irradiated at either 90 or 300K with electrons having energies from 25 to 300 keV in a transmission electron microscope (TEM). At all electron energies and at both temperatures a significant fraction of amorphous zones crystallized, showing that this effect is not due to a temperature increase and occurs at energies below the threshold displacement energy. Preliminary results show that in Ge the crystallization rate depends on the substrate orientation, while in Si this effect was not observed. The results are discussed in terms of possible explanations for epitaxial growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 67
Copyright
Copyright © Materials Research Society 1999

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