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High Quality in.Ga1−xas Heterostructures Grown on GaAs With Movpe

Published online by Cambridge University Press:  10 February 2011

M.T. Bulsara  and
E.A. Fitzgerald
M.T. Bulsara
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139
E.A. Fitzgerald
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139
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Abstract

InxGa1−xAs structures with compositionally graded buffers were grown by metal-organic vapor phase epitaxy (MOVPE) on GaAs substrates and characterized with plan-view and cross-sectional transmission electron microscopy (PV-TEM and X-TEM), atomic force microscopy (AFM), and x-ray diffraction (XRD). The results show that surface roughness experiences a maximum at growth temperatures where phase separation occurs in InxGa1−xAs. The strain energy due misfit dislocations in the graded buffer indirectly influences phase separation. At growth temperatures above and below this temperature, the surface roughness is decreased significantly; however, only growth temperatures above this regime ensure nearly complete relaxed graded buffers with the most uniform composition caps. With the optimum growth temperature for grading InxGa1−xAs determined to be 700°C, it was possible to produce In0.33Ga0.67As diode structures on GaAs with threading dislocation densities < 8.5 × 106/cm2

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 101
Copyright
Copyright © Materials Research Society 1998

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References

[1] Uchida, T., Kurakake, H., Soda, H., and Yamazaki, S., J. Elec. Mat., 12 (4), 581 (1996).Google Scholar
[2] Goorsky, M.S., Eldredge, J.W., Lord, S.M., and Harris, J.S., J. Vac. Sci. Technol. B 12, 1034 (1994).Google Scholar
[3] Samavedam, S. and Fitzgerald, E.A., J. Appl. Phys., 81 (7), 3108, (1997).Google Scholar
[4] Mahajan, S., Mat. Sci. and Eng. B, 30, 187 (1995).Google Scholar
[5] Glas, F., Inst. Phys. Conf. Ser., No. 134, 269 (1993).Google Scholar
[6] Stringfellow, G.B., J. Crysal Growth, 27, 21 (1974).Google Scholar
[7] Fitzgerald, E.A., Xie, Y.-H., Monroe, D., Silverman, P.J., Kuo, J.M., Kortan, A.R., Thiel, F.A., and Weir, B.E., J. Vac. Sci. Tech. B, 10 (4), 1807 (1992).Google Scholar
[8] Lord, S.M., Pezeshki, B., Marshall, A.F., Harris, J.S. Jr., Fernandez, R., and Harwit, A., Mat. Res. Soc. Symp. Proc., 281, 221 (1993).Google Scholar
[9] Fitzgerald, E.A., Samavedam, S., Xie, Y.-H. and Giovanne, L.M., J. Vac. Sci. Technol. B 15, 1048, (1997).Google Scholar