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Pulsed DC Magnetron Sputtered Rutile TiO2 films for next generation DRAM capacitors

Published online by Cambridge University Press:  26 June 2013

M.A Jithin ,
Lakshmi Ganapathi Kolla ,
Navakanta Bhat ,
S. Mohan ,
Yuichiro Morozumi  and
Sanjeev Kaushal
M.A Jithin
Affiliation:
Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India
Lakshmi Ganapathi Kolla*
Affiliation:
Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
Navakanta Bhat
Affiliation:
Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
S. Mohan
Affiliation:
Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India
Yuichiro Morozumi
Affiliation:
Tokyo Electron Ltd. Minato-ku, Tokyo, Japan
Sanjeev Kaushal
Affiliation:
Tokyo Electron Santa Clara Labs,Santa Clara, California, United States
*
*Corresponding author mail id: klganapathi@gmail.com
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Abstract

In this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.

Keywords

sputteringRaman spectroscopyRutherford backscattering (RBS)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1561: Symposium CC – Gate Stack Technology for End-of-Roadmap Devices in Logic, Power and Memory , 2013 , mrss13-1561-cc04-07
Copyright
Copyright © Materials Research Society 2013 

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