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Study on Epitaxial Growth of CeO2 (110)/Si(100) in Conjunction with Substrate Off-Orientation

Published online by Cambridge University Press:  15 February 2011

Tomoyasu Inoue ,
Yasuhiro Yamamoto ,
Masataka Satoh ,
Tetsu Ohsuna ,
Hiroaki Myoren  and
Tsutomu Yamashita
Tomoyasu Inoue
Affiliation:
Department of Electronic Engineering, lwaki Meisei University, 5-5-1 Chuoudai-lino, Iwaki, Fukushima 970, Japan
Yasuhiro Yamamoto
Affiliation:
Department of Electronic Engineering, lwaki Meisei University, 5-5-1 Chuoudai-lino, Iwaki, Fukushima 970, Japan
Masataka Satoh
Affiliation:
Research Center of Ion Beam Technology, Hosei University, 3-7-2 Kajino-cho, Koganei, Tokyo 184, Japan
Tetsu Ohsuna
Affiliation:
Department of Electronic Engineering, lwaki Meisei University, 5-5-1 Chuoudai-lino, Iwaki, Fukushima 970, Japan
Hiroaki Myoren
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Katahira, Sendai 980, Japan
Tsutomu Yamashita
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Katahira, Sendai 980, Japan
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Abstract

The substrate off-orientation effect is systematically studied on epitaxial CeO2(110) layers on Si(100), and the crystalline quality is significantly improved by enhancement of domains whose 〈110〉 is perpendicular to the offset-direction (Si〈110〉). AFM measurements indicate that the CeO2 layer surface consists of stripe-shaped facets and that their size is typically 100˜200 nm long, 20 nm wide and ∼3 nm high for a 150 nm-thick layer. RHEED and XTEM reveal that CeO2〈110〉 axis is inclined from wafer normal by the off-angle. The step arrangement at Si surface observed by XTEM relates closely to the inclination of the facets. It is found that off-orientation (≥∼,2.5°) leads to single crystal layer formation. RBS analyses verify that the crystalline quality is significantly improved, especially at the surface. The best result is obtained at the off-angle of 2.5°.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 101
Copyright
Copyright © Materials Research Society 1994

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