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Low-Temperature Crystallization of Pb(Zr0.4,Ti0.6)O3 Thin Films by Chemical Solution Deposition

Published online by Cambridge University Press:  17 March 2011

Kazunari Maki ,
Nobuyuki Soyama ,
Kaoru Nagamine ,
Satoru Mori  and
Katsumi Ogi
Kazunari Maki
Affiliation:
Mitsubishi Materials Corporation, Development Section, Sanda Plant, 12-6, Technopark, Sanda, Hyogo 669-1339, Japan
Nobuyuki Soyama
Affiliation:
Mitsubishi Materials Corporation, Development Section, Sanda Plant, 12-6, Technopark, Sanda, Hyogo 669-1339, Japan
Kaoru Nagamine
Affiliation:
Mitsubishi Materials Corporation, Development Section, Sanda Plant, 12-6, Technopark, Sanda, Hyogo 669-1339, Japan
Satoru Mori
Affiliation:
Mitsubishi Materials Corporation, Development Section, Sanda Plant, 12-6, Technopark, Sanda, Hyogo 669-1339, Japan
Katsumi Ogi
Affiliation:
Mitsubishi Materials Corporation, Naka Research Center, Central Research Institute, 1002-14 Mukohyama, Naka-Machi, Naka-Gun, Ibaraki 311-0102, Japan
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Abstract

We studied the crystallization of sol-gel derived Pb(Zr0.4Ti0.6)O3 [PZT(40/60)] thin films at 400 down to 390°C on Pt/SiO2/Si substrates by combination of diol-based solutions and modified film preparation processes. It was found that PZT films could be crystallized at 390°C and that PZT films crystallized at 400°C had microstructures with perovskite-single-phase columnar grains and good ferroelectric characteristics such as switched polarization (2 Pr) of 20 μC/cm2 and relative permittivity (εr) of 740. Next, we evaluated annealing temperature dependence of PZT(40/60) thin films crystallized at 390 to 435°C. The results indicated that (111)-orientation of perovskite phases became weaker, (100)-orientation of those became stronger, and the perovskite grain size increased with decreasing in annealing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C1.4.1
Copyright
Copyright © Materials Research Society 2002

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