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Effect of Composition on Ferroelectric Response of Bi4-xSmxTi3O12 Thin Films

Published online by Cambridge University Press:  26 February 2011

Sandra Dussan ,
Maharaj Tomar ,
Ricardo Melgarejo  and
Ram Katiyar
Sandra Dussan
Affiliation:
mtomar@uprm.edu
Maharaj Tomar
Affiliation:
mtomar@uprm.edu
Ricardo Melgarejo
Affiliation:
mtomar@uprm.edu
Ram Katiyar
Affiliation:
mtomar@uprm.edu
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Abstract

Bismuth titanate (Bi4Ti3O12) is an electroceramic within the Aurivillius phase material with week ferroelectric memory. However, the partial substitution of Bi ion by a trivalent rare earth resulted in improved ferroelectric polarization. We synthesized Bi4-xSmxTi3O12 by a solution chemistry route and thin films were deposited by spin coating on Pt (Pt/TiO2/SiO2/Si) substrate. X-ray diffraction studies of the films showed a stoichiometric solid solution for the composition x ≤0.85. The films showed fatigue free ferroelectric polarization (Pr = 19.8 µC/cm2) for the composition x = 0.70. The films showed low leakage current at room temperature, showing the possibility of lead free ferroelectric devices.

Keywords

ferroelectricitysol-gelx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T03-54
Copyright
Copyright © Materials Research Society 2006

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References

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