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Electrical and Optical Properties of PECVD Amorphous Silicon Grown at Low Frequencies

Published online by Cambridge University Press:  28 February 2011

W.W. Piper  and
G.E. Possin
W.W. Piper
Affiliation:
G. E. Corporate Research and Development, PO Box 8, Schenectady, NY 12301.
G.E. Possin
Affiliation:
G. E. Corporate Research and Development, PO Box 8, Schenectady, NY 12301.
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Abstract

The semiconducting properties of a-Si are ideally suited for making a switch to control the matrix addressing of an array of liquid crystal pixels. This investigation explores the differences between a-silicon deposited by plasma enhanced chemical vapor deposition at 13.56MHz and at 60KHz. The bonded hydrogen concentration, the index of refraction and the optical band gap of a-Si have been measured. The device used to explore the field effect mobility of a-Si is an inverted staggered FET fabricated on a glass substrate with conventional photolithography.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 9
Copyright
Copyright © Materials Research Society 1985

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