Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-25T22:06:35.010Z Has data issue: false hasContentIssue false

Pulsed Laser Processing of Electrodeposited CuInSe2 Photovoltaic Absorber Thin Films

Published online by Cambridge University Press:  01 February 2011

Ashish Bhatia
Affiliation:
ashish.bhatia@utah.edu, UNIVERSITY OF UTAH, SALT LAKE CITY, Utah, United States
Phillip Dale
Affiliation:
phillip.dale@uni.lu, University of Luxembourg, Belvaux, Luxembourg
Matt Nowell
Affiliation:
matt.nowell@ametek.com, EDAX, Draper, Utah, United States
Michael Scarpulla
Affiliation:
scarpulla@eng.utah.edu, University of Utah, Salt Lake City, Utah, United States
Get access

Abstract

CuInSe2 (CIS) is commercially processed using energy intensive vacuum processes such as sputtering and thermal evaporation followed by thermal annealing. In order to reduce the cost of fabricating CIS photovoltaic absorber layers we need fast and cheap processing methods. We have investigated the use of non-vacuum electrochemical deposition (ED) followed by ultra violet pulsed laser annealing (UV-PLA). We report here on the results of ns pulsed KrF irradiation of ED CIS films and ED CIS films which were first annealed in a Se atmosphere.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Ahmed, E. et al. , J. Mater. Eng. Perform. 15 213 (2006).Google Scholar
2 Voss, T. et al. , 22nd European Photovoltaics Solar Energy Conference, Milan, Italy (2007).Google Scholar
3 Wang, X.G. et al. , Sol. Energ. Mat. Sol. C., 88 (1) 65 (2005)Google Scholar
4 Dale, P.J. et al. , J. Phys. D: Appl. Phys. 41 085105 (2008).Google Scholar
5 Contreras, M.A. et al. , Prog. Photovolt.: Res. Appl.; 13 209 (2005)Google Scholar
6 Contreras, M.A. et al. , Prog. Photovolt.: Res. Appl. 7 311 (1999)Google Scholar