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The First Nitride Laser Diode on Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

J. D. Brown ,
J. T. Swindell ,
M. A. L. Johnson ,
Zhonghai Yu ,
J. F. Schetzina ,
G. E. Bulman ,
K. Doverspike ,
S. T. Sheppard ,
T. W. Weeks  and
M. Leonard
...Show all authors
J. D. Brown
Affiliation:
North Carolina State Univ., Raleigh, NC 27695-8202, janschetzina@ncsu.edu
J. T. Swindell
Affiliation:
North Carolina State Univ., Raleigh, NC 27695-8202, janschetzina@ncsu.edu
M. A. L. Johnson
Affiliation:
North Carolina State Univ., Raleigh, NC 27695-8202, janschetzina@ncsu.edu
Zhonghai Yu
Affiliation:
North Carolina State Univ., Raleigh, NC 27695-8202, janschetzina@ncsu.edu
J. F. Schetzina
Affiliation:
North Carolina State Univ., Raleigh, NC 27695-8202, janschetzina@ncsu.edu
G. E. Bulman
Affiliation:
Cree Research, Inc., Durham, NC
K. Doverspike
Affiliation:
Cree Research, Inc., Durham, NC
S. T. Sheppard
Affiliation:
Cree Research, Inc., Durham, NC
T. W. Weeks
Affiliation:
Cree Research, Inc., Durham, NC
M. Leonard
Affiliation:
Cree Research, Inc., Durham, NC
H. S. Kong
Affiliation:
Cree Research, Inc., Durham, NC
H. Dieringer
Affiliation:
Cree Research, Inc., Durham, NC
C. Carter
Affiliation:
Cree Research, Inc., Durham, NC
J. A. Edmond
Affiliation:
Cree Research, Inc., Durham, NC
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Abstract

This paper reports the events at NCSU leading up to and including those of June 5, 1997 which produced the first demonstration of a nitride laser diode on silicon carbide – and the very first nitride laser demonstration outside of Japan. All of the laser diode samples tested at NCSU were designed, grown, and fabricated into cleaved cavity test structures at Cree Research. Laser testing at NCSU consisted of spectral emission versus current measurements, light output power versus current (L-I) measurement, and light output polarization measurements versus current. The first successful laser on silicon carbide emitted at 402.6 nm. Subsequently, lasers displaying outputs ranging from 402.6 to 430.2 have been successfully tested at NCSU.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1179
Copyright
Copyright © Materials Research Society 1998

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References

1. Amano, H., Kito, M., Hiramasu, K. and Akasaki, I., Jpn, J. Appl. Phys 28, L2112 (1989).10.1143/JJAP.28.L2112Google Scholar
2. Nakamura, S., Mukai, T. and Senoh, M., Appl. Phys. Lett 64, 1687 (1994).10.1063/1.111832Google Scholar
3. Nakamura, S., Senoh, M., Iwage, N. and Nagahama, S., Jpn. J. Appl. Phys 34, L797 (1995).10.1143/JJAP.34.L797Google Scholar
4. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).10.1143/JJAP.35.L74Google Scholar
5. Nakamura, S., ”The Blue Laser Diode” (Springer, Berlin, 1997).10.1007/978-3-662-03462-0Google Scholar
6. Itaya, K., Onojura, M., Nishio, O, Sugiura, L., Saito, S., Suzuki, M., Reddie, J., Nunoue, S., Yamamoto, M., Fufimoto, J., Kokubun, Y., Ohba, Y., Hatakoshi, G. and Ishikawa, M. Jpn. J. Appl. Phys 35, L1315 (1996).10.1143/JJAP.35.L1315Google Scholar
7. Yamada, T., Proceedings of the ICSC 11-N conference, Stockholm, Sweden (1997).Google Scholar
8. Nakamura, S., Proceedings of the ICNS ‘97 Conference, Tokushima, Japan (1997).Google Scholar