Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-25T18:06:23.163Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films

Published online by Cambridge University Press:  17 March 2011

S.O. Kucheyev ,
J.E. Bradby ,
J.S. Williams ,
M.V. Swain ,
M. Toth ,
M.R. Phillips  and
C. Jagadish
S.O. Kucheyev
Affiliation:
Department of Electronic Materials Enginering, RSPhysSE, The Australian National University, Canberra, ACT 0200, Australia E-mail address: sergei.kucheyev@anu.edu.au
J.E. Bradby
Affiliation:
Department of Electronic Materials Enginering, RSPhysSE, The Australian National University, Canberra, ACT 0200, Australia E-mail address: sergei.kucheyev@anu.edu.au
J.S. Williams
Affiliation:
Department of Electronic Materials Enginering, RSPhysSE, The Australian National University, Canberra, ACT 0200, Australia E-mail address: sergei.kucheyev@anu.edu.au
M.V. Swain
Affiliation:
Biomaterials Science Research Unit, Department if Mechancal and Mechatronic Engineering and Faculty of Dentitry, University of Sydney, Eveleigh, NSW 1430, Australia
M. Toth
Affiliation:
Microstructural Analaysis Unit, University of Sydney, Broadway, NSW 2007, Australia
M.R. Phillips
Affiliation:
Microstructural Analaysis Unit, University of Sydney, Broadway, NSW 2007, Australia
C. Jagadish
Affiliation:
Department of Electronic Materials Enginering, RSPhysSE, The Australian National University, Canberra, ACT 0200, Australia E-mail address: sergei.kucheyev@anu.edu.au
Get access

Abstract

The deformation behavior of as-grown and ion-beam-modified wurtzite GaN films is studied by a nanoindentation with a spherical indenter. Atomic force microscopy (AFM) and cathodoluminescence are used to characterize the deformation mode. No systematic dependence of the mechanical properties on the film thickness ( at least for thicknesses from 1.8 to 4 μm) as well as on doping type is observed. Results strongly suggest that (i) slip is the major contributor to the plastic deformatio of crystalline GaN and (ii) slip nucleation (rater than a phae transformation) is responsible for “pop-in” events observed during loading. Indentation with an ∼ 4.2 μm radius spherical indenter at maximum loads up to 900 mN does not produce any cracking visible by AFM in crystalline GaN. Instead, under such loads, indentation results in a pronounced elevation of the material around the impression. Implantation disorder dramatically changes the deformation behaviour of GaN. In particular, implanation-produced defects in crystalline GaN syppress (i) “pop-in” events during loading, (ii) slip bands observed by AFM, and (iii) the plastic component of deformation. GaN amorphized by in bombardment exhibits plastic flow even for very low loads. The values of hardness and elastic modulus of amorphous GaN are dramatically reduced compared to those of as-grown GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 649: Symposium Q – Fundamentals of Nanoindentation & Nanotribology II , 2000 , Q5.5
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] see, for example, a recent review by Pearton, S.J., Zolper, J.C., Shul, R.J., and Ren, F., J. Appl. Phys. 86, 1 (1999), and references therein.Google Scholar
[2] Drory, M.D., Ager, J.W. III, Suski, T., Grazegory, I., and POrowski, S., App. Phys. Lett. 69, 4044 (1996).Google Scholar
[3] Yu, G., Ishikawa, H., Egawa, T., Soga, T., Watanabe, J., Jimbo, T., and Umeno, M., J. Cryst. Growth 189/190, 701 (1998)Google Scholar
[4] Yonenaga, I., Hoshi, T., and Usui, A., Mater.Res.Soc.Symp.Proc. 595, W3.90.1 (1999)Google Scholar
[5] Nowak, R., Pessam, M., Suganuma, M., Leszczynski, M., Grzegory, I., Porowski, S., and Yoshida, F., Appl. Phys. Lett. 5, 2070 (1999)Google Scholar
[6] Cáceres, D., Vergara, I., González, R., Monroy, E., Calle, F., Muñoz, E., Omnés, F., J. Appl. Phys. 86, 6773 (1999)Google Scholar
[7] Hong, M.H., Samant, A.V., Orlov, V., Farber, B., Kisielowski, C., and Pirouz, P., Mater. Res. Soc. Symp. Proc. 572, 369 (1999); Hong, M.H., Pirouz, P., Tavernier, P.M., and Clarke, D.R., Mater. Res. Soc. Symp. Proc. 622, (2000) in press.Google Scholar
[8] Zaldívar, M.H., Fernándes, P., and Piqueras, J., Semicond. Sci. Techno. 13, 900 (1998).Google Scholar
[9] Kucheyev, S.O., Williams, J.S., Jagadish, C., Zou, J., Craig, V.S.J., and Li, G., Appl. Phys. Lett. 77, 1455 (2000).Google Scholar
[10] Kucheyev, S.O., Williams, J.S., Jagadish, C., Zou, J., Li, G., Phys. Rev. B 62,7510 (2000).Google Scholar
[11] Field, J.S. and Swain, M.V., J. Mater. Res. 8, 297 (1993).Google Scholar
[12] Maeda, K., Suzuki, K., Ichihara, M., Nishiguchi, S., Ono, K., Mera, Y., and Takeuchi, S., Physica B 273–274, 134 (1999).Google Scholar